TITLE

Transparent p-type semiconductor: LaCuOS layered oxysulfide

AUTHOR(S)
Ueda, K.; Inoue, S.; Hirose, S.; Kawazoe, H.; Hosono, H.
PUB. DATE
October 2000
SOURCE
Applied Physics Letters;10/23/2000, Vol. 77 Issue 17
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
La[sub 1-x]Sr[sub x]CuOS (x=0, 0.05) thin films prepared by radio-frequency sputtering were found to have high optical transmission (>=70%) at the visible and near-infrared wavelengths and an energy gap of about 3.1 eV. The dc electrical conductivities of x=0 and 0.05 thin films at room temperature were 1.2x10[sup -2] and 2.6x10[sup -1] S cm[sup -1], respectively. The Seebeck coefficients of these samples were positive, indicating that p-type electrical conduction is dominant in these materials. A sharp photoluminescence peak, probably originating from an interband transition, was observed at the optical absorption edge. The present study demonstrates that LaCuOS is a promising transparent p-type semiconductor for optoelectronic applications. Moreover, our material design, based on chemical modulation of the valence band, was successfully extended to oxysulfide systems. © 2000 American Institute of Physics.
ACCESSION #
4414654

 

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