Defect generation in ultrathin silicon dioxide films produced by anode hole injection

DiMaria, D. J.; DiMaria, D.J.
October 2000
Applied Physics Letters;10/23/2000, Vol. 77 Issue 17
Academic Journal
A direct demonstration of defect generation in ultrathin silicon dioxide films due to the transport of holes through this layer is reported. These defects are observed only when the hole current to the cathode of the device exceeds the electron current to the anode. This condition is produced on p-channel field-effect transistors under negative gate-voltage-bias conditions with ultrathin gate oxide layers. These results are related to current reliability models which use anode hole injection and the defects produced to explain destructive breakdown of the oxide layer. © 2000 American Institute of Physics.


Related Articles

  • Characteristics of the Si-SiO2 interface states in thin (70–230 Ã…) oxide structures. Kar, S.; Narasimhan, R. L. // Journal of Applied Physics;6/15/1987, Vol. 61 Issue 12, p5353 

    Investigates the characteristics of the Si-SiO[sub2] interface states in unannealed metal-silicon dioxide-silicon (MOS) structures. Thickness of the oxide layer needed to realize MOS field-effect transistors (FET) with submicron channel lengths; Description of such MOS structures; Requirements...

  • Grown-facet-dependent characteristics of silicon-on-insulator by lateral solid phase epitaxy. Kusukawa, K.; Moniwa, M.; Murakami, E.; Warabisako, T.; Miyao, M. // Applied Physics Letters;5/16/1988, Vol. 52 Issue 20, p1681 

    Electrical characteristics of Si layers on SiO2 formed by seeded lateral solid phase epitaxy are evaluated using metal-oxide-semiconductor field-effect transistors (MOSFET’s) fabricated in the layer. To evaluate the {110} and {111} facet grown areas separately, the locations of the...

  • Positive and negative charge creation in the SiO[sub 2] film of a MOS transistor by high electric field stress. Strzalkowski, I.; Kowalski, M. // Applied Physics A: Materials Science & Processing;1996, Vol. 63 Issue 2, p179 

    The aim of this work was to study the charge creation in the SiO[sub 2] layer of a Si MOSFET induced by the electric field stress in the Fowler-Nordheim (FN) tunneling regime. At lower field, typical positive oxide charge generation has been observed. With an increasing stressing field, which is...

  • Radiation sensitivity reduction in deuterium annealed Si–SiO[sub 2] structures. Chavez, J. R.; Devine, R. A. B.; Shedd, W. M. // Applied Physics Letters;1/14/2002, Vol. 80 Issue 2, p213 

    The x-ray radiation sensitivity of Si–SiO[sub 2]–Si structures annealed at 420 °C in hydrogen containing forming gas and deuterium containing forming gas is compared. Irradiations carried out without electrical bias and with ±0.5 MV cm-1 up to doses ∼2M rad (SiO[sub 2])...

  • Electret mechanism, hysteresis, and ambient performance of sol-gel silica gate dielectrics in pentacene field-effect transistors. Cahyadi, T.; Tan, H. S.; Mhaisalkar, S. G.; Lee, P. S.; Boey, F.; Chen, Z.-K.; Ng, C. M.; Rao, V. R.; Qi, G. J. // Applied Physics Letters;12/10/2007, Vol. 91 Issue 24, p242107 

    The electret induced hysteresis was studied in sol-gel silica films that result in higher drain currents and improved device performance in pentacene field-effect transistors. Vacuum and ambient condition studies of the hysteresis behavior and capacitance-voltage characteristics on single layer...

  • Injected carrier distribution in a pentacene field effect transistor probed using optical second harmonic generation. Yamada, Daisuke; Manaka, Takaaki; Lim, Eunju; Tamura, Ryousuke; Weis, Martin; Iwamoto, Mitsumasa // Journal of Applied Physics;Oct2008, Vol. 104 Issue 7, p074502 

    The injected carrier distribution in a pentacene field effect transistor (FET) was examined using optical second harmonic generation (SHG) measurements. Results showed that the SHG signal representing the profile of carriers injected from the source electrode distributed along the channel...

  • Hole trap related hysteresis in pentacene field-effect transistors. Ucurum, C.; Goebel, H.; Yildirim, F. A.; Bauhofer, W.; Krautschneider, W. // Journal of Applied Physics;Oct2008, Vol. 104 Issue 8, p084501 

    We have investigated hysteresis in pentacene-based field-effect transistors with SiO2 as gate dielectric. A clear hysteresis behavior in transfer and output characteristics is reported. Measurements show that the observed hysteresis is due to hole trapping in the pentacene film. Long time...

  • Microwave plasma nitridation of silicon dioxide on strained Si. Bera, L. K.; Banerjee, H. D.; Ray, S. K.; Mukhopadhyay, M.; Maiti, C. K. // Applied Physics Letters;9/14/1998, Vol. 73 Issue 11 

    Growth of ultrathin (<100 Ã…) nitrided SiO[sub 2] on strained Si using microwave O[sub 2]/N[sub 2]O/NH[sub 3] plasma is reported. X-ray photoelectron spectroscopy results indicate a nitrogen-rich layer at the strained Si/SiO[sub 2] interface. The electrical properties of the nitrided oxides...

  • Gate bias stress in pentacene field-effect-transistors: Charge trapping in the dielectric or semiconductor. Häusermann, R.; Batlogg, B. // Applied Physics Letters;8/22/2011, Vol. 99 Issue 8, p083303 

    Gate bias stress instability in organic field-effect transistors (OFETs) is a major conceptual and device issue. This effect manifests itself by an undesirable shift of the transfer characteristics and is associated with long term charge trapping. We study the role of the dielectric and the...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics