Magnetoresistance of self-assembled lateral multilayers

Tober, E. D.; Tober, E.D.; Marks, R. F.; Marks, R.F.; Chambliss, D. D.; Chambliss, D.D.; Roche, K. P.; Roche, K.P.; Toney, M. F.; Toney, M.F.; Kellock, A. J.; Kellock, A.J.; Farrow, R. F. C.; Farrow, R.F.C.
October 2000
Applied Physics Letters;10/23/2000, Vol. 77 Issue 17
Academic Journal
The angular-dependent magnetoresistance and magnetization of epitaxial Fe[sub η]Ag[sub 1-η] self-assembled lateral multilayers (SALMs) grown on Mo(110)/Al[sub 2]O[sub 3](11-2 0) template layers has been examined for an optimum stoichiometry of η=0.38. The low-temperature anisotropic magnetoresistance (AMR) and low-field magnetoresistance (MR) are measured as a function of field angle for two nearly orthogonal current directions. The SALM structures are observed to display a significant AMR (roughly 1.6% maximum for the entire structure) and a pronounced field-dependent MR with a maximum ΔR/R of 0.88% at 2.7 K. © 2000 American Institute of Physics.


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