TITLE

Ultrathin silicon nitride gate dielectrics prepared by catalytic chemical vapor deposition at low temperatures

AUTHOR(S)
Sato, Hidekazu; Izumi, Akira; Matsumura, Hideki
PUB. DATE
October 2000
SOURCE
Applied Physics Letters;10/23/2000, Vol. 77 Issue 17
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The feasibility of using ultrathin silicon nitride (SiN[sub x]) films, prepared by catalytic chemical vapor deposition (Cat-CVD) method, as an ultrathin gate dielectric is reported. The effects of postdeposition treatments carried out using hydrogen (H[sub 2])-decomposed species or NH[sub 3]-decomposed species formed by catalytic cracking of H[sub 2] and NH[sub 3] are also studied. A small hysteresis loop is seen in the C-V curve of as-deposited Cat-CVD SiN[sub x] films. The leakage current in the case of these films with equivalent oxide thickness (EOT) of 3 nm is slightly larger than that in the conventional thermal SiO[sub 2] films of similar EOT. However, it is found that the properties of Cat-CVD SiN[sub x] films are markedly improved by the postdeposition H[sub 2] or NH[sub 3] treatments, that is, the hysteresis loop disappears and the leakage current decreases by three orders of magnitude. © 2000 American Institute of Physics.
ACCESSION #
4414635

 

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