Epitaxial growth of AlN and Al[sub 0.5]Ga[sub 0.5]N layers on aluminum nitride substrates

Schowalter, L. J.; Schowalter, L.J.; Shusterman, Y.; Wang, R.; Bhat, I.; Arunmozhi, G.; Slack, G. A.; Slack, G.A.
February 2000
Applied Physics Letters;2/21/2000, Vol. 76 Issue 8
Academic Journal
High quality epitaxial AlN and Al[sub x]Ga[sub 1-x]N layers have been grown by organo-metallic vapor-phase epitaxy on single crystal a-face AlN substrates. Here we report the characterization of these layers using Rutherford backscattering/ion channeling spectroscopy, atomic force microscopy, double crystal x-ray diffraction, and preliminary electrical results. Ion channeling along the [112¯0] axis gave a minimum yield of 1.5% for an AlN layer and 2.2% for an Al[sub 0.5]Ga[sub 0.5]N, indicating excellent crystal quality. A resistivity of 20 Ω cm and a mobility of 20 cm[sup 2]/V s was measured in a Si-doped, 1-μm-thick Al[sub 0.5]Ga[sub 0.5]N grown epitaxially on the AlN substrates. © 2000 American Institute of Physics.


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