TITLE

Improved band alignment for hole injection by an interfacial layer in organic light emitting devices

AUTHOR(S)
Chkoda, L.; Heske, C.; Sokolowski, M.; Umbach, E.
PUB. DATE
August 2000
SOURCE
Applied Physics Letters;8/21/2000, Vol. 77 Issue 8
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We demonstrate that a thin organic interfacial layer of 3,4,9,10 perylenetetracarboxylic dianhydride (PTCDA) can be utilized to improve the band alignment of N,N′-di-(3-methylphenyl)N,N′diphenyl-4,4′diaminobiphenyl (TPD) films on [indium-tin-oxide (ITO)] (InSnO) substrates in, e.g., organic electroluminescent devices. A photoemission study of the highest occupied molecular orbital (HOMO) and vacuum level position as a function of the organic overlayer thickness reveals that due to chemisorptive bonding a thin PTCDA interlayer results in a reduced barrier between the Fermi level of ITO and the HOMO of TPD. Furthermore we detect a new molecular state 0.6 eV below the Fermi level at the PTCDA/ITO interface. Both effects are expected to improve the hole injection from the ITO anode into the TPD hole transport layer, e.g., in organic light emitting devices. © 2000 American Institute of Physics.
ACCESSION #
4414518

 

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