Reduction of threading defects in GaN grown on vicinal SiC(0001) by molecular-beam epitaxy

Xie, M. H.; Xie, M.H.; Zheng, L. X.; Zheng, L.X.; Cheung, S. H.; Cheung, S.H.; Ng, Y. F.; Ng, Y.F.; Wu, Huasheng; Huasheng Wu; Tong, S. Y.; Tong, S.Y.; Ohtani, N.
August 2000
Applied Physics Letters;8/21/2000, Vol. 77 Issue 8
Academic Journal
We observe a significant reduction of threading dislocations in GaN grown on vicinal substrates of SiC(0001). Using scanning tunneling microscopy, we find films grown on vicinal substrates maintain the surface misorientation of the substrate and display terraces with straight edges. On top of the terraces there is no spiral mound, which is the main feature found for films grown on singular substrates. Transmission electron microscopy studies confirm that threading screw dislocations are reduced by two orders of magnitude while edge dislocations are reduced by one order. © 2000 American Institute of Physics.


Related Articles

  • Growth and characterizations of GaN on SiC substrates with buffer layers. Lin, C.F.; Cheng, H.C.; Chi, G. C.; Feng, M. S.; Guo, J. D.; Minghuang Hong, J.; Chen, C. Y. // Journal of Applied Physics;9/1/1997, Vol. 82 Issue 5, p2378 

    Studies the growth and characterizations of galliumnitride on silicon carbide substrates with buffer layers. Enhanced electron mobility; Hall measurement and sheet carrier density; Bulk carrier density and lattice constants.

  • Buffer free direct growth of GaN on 6H-SiC by metalorganic vapor phase epitaxy. Lahreche, H.; Leroux, M. // Journal of Applied Physics;1/1/2000, Vol. 87 Issue 1, p577 

    Presents a three steps growth process that enables the growth of high quality mirrorlike Gallium Nitride (GaN) layers without using A1N buffer layers. Physical characteristics of both GaN and Silicon Carbide; Details of the growth method; Strain state and correlated optical properties.

  • Molecular beam epitaxy growth of GaN on C-terminated 6H-SiC (000[OVERLINE]1[/OVERLINE]) surface. Guan, Z. P.; Guan, Z.P.; Cai, A. L.; Cai, A.L.; Cabalu, J. S.; Cabalu, J.S.; Porter, H. L.; Porter, H.L.; Huang, S. // Applied Physics Letters;10/16/2000, Vol. 77 Issue 16 

    We report the results of successful growth of GaN on the C-terminated surface of SiC. A combination of direct heating and hydrogen plasma treatment was employed for surface preparation. High-quality epitaxy was achieved in epilayers as thin as 2000 Ã…, as evidenced by the x-ray diffraction...

  • Structural properties of cubic GaN epitaxial layers grown on β-SiC. Teles, L. K.; Scolfaro, L. M. R.; Enderlein, R.; Leite, J. R.; Josiek, A.; Schikora, D.; Lischka, K. // Journal of Applied Physics;12/1/1996, Vol. 80 Issue 11, p6322 

    Presents a study which investigated the structural properties of cubic gallium nitride epitaxial layers grown on Î’-silicon carbide substrates. Description of the self-consistent total energy calculation method; Application of system and parameter specifications; Comparison of cohesion...

  • Substrate-polarity dependence of metal-organic vapor-phase epitaxy-grown GaN on SiC. Sasaki, T.; Matsuoka, T. // Journal of Applied Physics;11/1/1988, Vol. 64 Issue 9, p4531 

    Presents a study that described metal-organic vapor-phase epitaxy of gallium nitride on silicon carbide. Methodology; Examination of the surface morphology of gallium nitride; Evaluation of the surface polarity of the samples.

  • Magnesium Outdiffusion from Porous Silicon Carbide Substrates during Autodoping of Gallium Nitride Epilayers. Mynbaeva, M. G.; Lavrent’ev, A. A.; Fomin, A. V.; Mynbaev, K. D.; Lebedev, A. A. // Technical Physics Letters;Jun2003, Vol. 29 Issue 6, p474 

    We have studied the outdiffusion of magnesium from silicon carbide substrates during autodoping of gallium nitride epilayers. The autodoping effect was observed in the case of porous substrates obtained by surface anodization of 6H-SiC wafers. It is established that the magnesium distribution...

  • Properties of GaN grown at high rates on sapphire and on 6H–SiC. Fischer, S.; Wetzel, C.; Hansen, W. L.; Bourret-Courchesne, E. D.; Meyer, B. K.; Haller, E. E. // Applied Physics Letters;10/28/1996, Vol. 69 Issue 18, p2716 

    Thick GaN films were deposited with growth rates as high as 250 μm/h by the direct reaction of ammonia and gallium vapor at 1240 °C. The characteristics of our films are comparable to those of typical thin films grown by metal organic chemical vapor deposition or molecular beam epitaxy....

  • Luminescence properties of gallium nitride layers grown on silicon carbide substrates by gas-phase epitaxy in a chloride system. Zubrilov, A. S.; Mel�nik, Yu. V.; Tsvetkov, D. V.; Bugrov, V. E.; Nikolaev, A. E.; Stepanov, S. I.; Dmitriev, V. A. // Semiconductors;May97, Vol. 31 Issue 5, p523 

    The luminescence properties of undoped epitaxial layers of gallium nitride grown on silicon carbide substrates by gas-phase epitaxy in a chloride system have been investigated. An edge band (361 nm, 96 K) and defect bands (380, 430, 560 nm, 96 K) were recorded in the photo- and...

  • Test points.  // Solid State Technology;Mar2012, Vol. 55 Issue 2, p2 

    The article announces that silicon carbide (SiC) and gallium nitride (GaN) have been considered as the most promising materials for power devices.


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics