Band gap engineering in amorphous Al[sub x]Ga[sub 1-x]N: Experiment and ab initio calculations

Chen, Hong; Hong Chen; Chen, Kuiying; Kuiying Chen; Drabold, D. A.; Drabold, D.A.; Kordesch, M. E.; Kordesch, M.E.
August 2000
Applied Physics Letters;8/21/2000, Vol. 77 Issue 8
Academic Journal
Amorphous alloys of aluminum nitride and gallium nitride deposited at 100 K at compositions ranging from pure AlN to pure GaN with optical band gaps which vary linearly with composition from 3.27 eV (a-GaN) to 5.95 eV (a-AlN) have been synthesized. Ab initio molecular dynamics calculations for these alloys reproduce the band gap versus composition data and give specific information on the electronic localization of the band tail states. There are no midgap states in amorphous Al[sub x]Ga[sub 1-x]N alloys. The calculated models have mixed four-fold and three-fold coordination and have no wrong (homopolar nuclear) bonds, demonstrating the strong ionicity in amorphous Al[sub x]Ga[sub 1-x]N alloys. It has been found that the valence band tail states are mostly localized on the three-fold coordinated N sites while the conduction band tail states are mostly localized on the three-fold coordinated Ga or Al sites. © 2000 American Institute of Physics.


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