TITLE

Codoping characteristics of Zn with Mg in GaN

AUTHOR(S)
Kim, K. S.; Kim, K.S.; Han, M. S.; Han, M.S.; Yang, G. M.; Yang, G.M.; Youn, C. J.; Youn, C.J.; Lee, H. J.; Lee, H.J.; Cho, H. K.; Cho, H.K.; Lee, J. Y.; Lee, J.Y.
PUB. DATE
August 2000
SOURCE
Applied Physics Letters;8/21/2000, Vol. 77 Issue 8
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The doping characteristics of Mg-Zn codoped GaN films grown by metalorganic chemical vapor deposition are investigated. By means of the concept of Mg-Zn codoping technique, we have grown p-GaN showing a low electrical resistivity (0.72 Ω cm) and a high hole concentration (8.5x10[sup 17] cm[sup -3]) without structural degradation of the film. It is thought that the codoping of Zn atoms with Mg raises the Mg activation ratio by reducing the hydrogen solubility in p-GaN. In addition, the measured specific contact resistance of Mg-Zn codoped GaN film is 5.0x10[sup -4] Ω cm[sup 2], which is one order of magnitude lower than that of Mg doped only GaN film (1.9x10[sup -3] Ω cm[sup 2]). © 2000 American Institute of Physics.
ACCESSION #
4414508

 

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