Codoping characteristics of Zn with Mg in GaN

Kim, K. S.; Kim, K.S.; Han, M. S.; Han, M.S.; Yang, G. M.; Yang, G.M.; Youn, C. J.; Youn, C.J.; Lee, H. J.; Lee, H.J.; Cho, H. K.; Cho, H.K.; Lee, J. Y.; Lee, J.Y.
August 2000
Applied Physics Letters;8/21/2000, Vol. 77 Issue 8
Academic Journal
The doping characteristics of Mg-Zn codoped GaN films grown by metalorganic chemical vapor deposition are investigated. By means of the concept of Mg-Zn codoping technique, we have grown p-GaN showing a low electrical resistivity (0.72 Ω cm) and a high hole concentration (8.5x10[sup 17] cm[sup -3]) without structural degradation of the film. It is thought that the codoping of Zn atoms with Mg raises the Mg activation ratio by reducing the hydrogen solubility in p-GaN. In addition, the measured specific contact resistance of Mg-Zn codoped GaN film is 5.0x10[sup -4] Ω cm[sup 2], which is one order of magnitude lower than that of Mg doped only GaN film (1.9x10[sup -3] Ω cm[sup 2]). © 2000 American Institute of Physics.


Related Articles

  • Transmission electron microscopy of defects in GaN films formed by epitaxial lateral overgrowth. Sakai, Akira; Sunakawa, Haruo; Usui, Akira // Applied Physics Letters;7/27/1998, Vol. 73 Issue 4 

    We have investigated by transmission electron microscopy (TEM) defect morphology and structure in GaN films formed using an epitaxial lateral overgrowth (ELO) technique on SiO[sub 2]-mask/window-stripe-patterned GaN layers in hydride vapor-phase epitaxy. In this experiment, the regions overgrown...

  • On the kinetics of growth of highly defective GaN epilayers and the origin of the deep trap.... Liu, H.; Kim, J.G. // Applied Physics Letters;7/21/1997, Vol. 71 Issue 3, p347 

    Examines the kinetics of growth of gallium nitride (GaN)/(0001) sapphire heteroepitaxial films. Employment of an alternate element exposure method of growth; Use of GaN in short-wavelength optoelectronic device applications; Interpretation of time dependent recovery of reflection high energy...

  • Comparison of trimethylgallium and triethylgallium for the growth of GaN. Saxler, A.; Walker, D. // Applied Physics Letters;12/1/1997, Vol. 71 Issue 22, p3272 

    Compares gallium nitride (GaN) films grown by low-pressure chemical vapor deposition using trimethylgallium and triethylgallium (TEGa). Characterization of the films; Exhibition of superior electrical and optical properties by GaN layers grown using TEGa; Display of near-bandedge...

  • Formation mechanism of a degenerate thin layer at the interface of a GaN/sapphire system. Xu, X. L.; Beling, C. D.; Fung, S.; Zhao, Y. W.; Sun, N. F.; Sun, T. N.; Zhang, Q. L.; Zhan, H. H.; Sun, B. Q.; Wang, J. N.; Ge, W. K.; Wong, P. C. // Applied Physics Letters;1/10/2000, Vol. 76 Issue 2, p152 

    It has recently been suggested that the thin degenerate layer found at the GaN/sapphire interface results from a high concentration of stacking faults. The studies of this letter, however, show that this is not the most likely explanation for the presence of such a degenerate layer. Using x-ray...

  • Microcavity effects in GaN epitaxial films and in Ag/GaN/sapphire structures. Billeb, A.; Grieshaber, W. // Applied Physics Letters;5/26/1997, Vol. 70 Issue 21, p2790 

    Examines the microcavity effects in gallium nitride epitaxial thin films and in silver/gallium nitride/sapphire structures. Impact of the semiconductor-air interface on intensity modulation; Degree of intensity modulation in the epitaxial layer luminescence spectra; Influence of metallic...

  • Growth mode and surface morphology of a GaN film deposited along the N-face polar... Sumiya, M.; Yoshimura, K. // Journal of Applied Physics;7/15/2000, Vol. 88 Issue 2, p1158 

    Studies the dependence of polar direction of GaN film on growth conditions. Deposition of GaN films on a nitrided sapphire by metalorganic chemical vapor deposition; Change in surface morphology; Relationship between surface morphology and polarity; Substrate nitridation and GaN polarity.

  • Vertical-cavity, room-temperature stimulated emission from photopumped GaN films deposited over... Khan, M. Asif; Olson, D.T.; Van Hove, J.M.; Kuznia, J.N. // Applied Physics Letters;4/8/1991, Vol. 58 Issue 14, p1515 

    Reports on the observation of near-ultraviolet vertical-cavity stimulated emission from a photopumped gallium nitride epilayer at room temperature. Deposition of the epilayer over AIN-coated basal plane sapphire substrate using low-pressure metalorganic chemical vapor deposition.

  • X-ray studies of defects and thermal vibrations in an organometallic vapor phase epitaxy grown... Xiong, X.; Moss, S.C. // Journal of Applied Physics;9/1/1997, Vol. 82 Issue 5, p2308 

    Studies a semiconducting GaN thin film with the 001 plane parallel to the surface grown by organometallic vapor phase epitaxy method on (110) sapphire using x-ray diffraction. Line profiles of the GaN thin film; Deformation and growth faults determination.

  • Growth of GaN films by hot wall epitaxy. Ishida, A.; Yamamoto, E. // Applied Physics Letters;7/31/1995, Vol. 67 Issue 5, p665 

    Details the preparation of gallium nitride (GaN) films by hot wall epitaxy on sapphire substrates from gallium and ammonia sources. Investigation of the growth characteristics of GaN films; Effects of initial layers on film growth; Performance of reflection high energy electron diffraction...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics