TITLE

Acceptor reactivation kinetics in heavily carbon-doped GaAs epitaxial layers

AUTHOR(S)
Mimila-Arroyo, J.; Bland, S. W.; Bland, S.W.
PUB. DATE
August 2000
SOURCE
Applied Physics Letters;8/21/2000, Vol. 77 Issue 8
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The reactivation kinetics of the acceptor behavior of carbon in GaAs layers has been studied. The reactivation was achieved by ex situ rapid thermal annealing. To follow the carbon reactivation process, a multistage annealing experiment was performed, with changes in the sample carrier concentration monitored at each stage. An analysis of these data indicates that carbon reactivation follows a first-order kinetics process that can be explained by a model which includes the effects of dopant repassivation by hydrogen retrapping during hydrogen out-diffusion, and a dependence of the attempt frequency with the carbon concentration. The reactivation occurs with an activation energy of 1.41 eV. © 2000 American Institute of Physics.
ACCESSION #
4414492

 

Related Articles

  • Strain-induced material intermixing of InAs quantum dots in GaAs. Lipinski, M. O.; Lipinski, M.O.; Schuler, H.; Schmidt, O. G.; Schmidt, O.G.; Eberl, K.; Jin-Phillipp, N. Y.; Jin-Phillipp, N.Y. // Applied Physics Letters;9/18/2000, Vol. 77 Issue 12 

    A systematic investigation of the stacking behavior of InAs quantum dots (QDs) with varying GaAs interlayer thickness d is presented. We compare two-fold stacks of large QDs (approx. 25 nm base width), which emit at 1.30 μm, to small QDs (approx. 20 nm base width) emitting at 1.14 μm. For...

  • Langmuir–Blodgett film passivation of unpinned n-type gallium arsenide surfaces. Tabib-Azar, M.; Dewa, A. S.; Ko, W. H. // Applied Physics Letters;1/18/1988, Vol. 52 Issue 3, p206 

    This letter reports the results of the passivation of photochemically unpinned GaAs surfaces using Langmuir–Blodgett (LB) films. Metal-insulator-semiconductor structures are fabricated with LB films as the insulator. The high-frequency capacitance versus voltage measurements show an order...

  • Epitaxial MnGa/NiGa magnetic multilayers on GaAs. Tanaka, M.; Harbison, J.P. // Applied Physics Letters;8/2/1993, Vol. 63 Issue 5, p696 

    Examines the epitaxial transition metals manganese gallium and nickel gallium magnetic multilayers on gallium arsenide. Use of molecular beam epitaxy (MBE) in aligning the c axis of the unit cell of manganese compounds; Accounts on several strengths of MBE on epitaxial film study; Ostentation...

  • Interface structure and chemistry in ZnSe/Ga[sub 1-x]Mn[sub x]As/ZnSe heterostructures. Lian, G. D.; Dickey, E. C.; Chun, S. H.; Ku, K. C.; Samarth, N. // Applied Physics Letters;5/26/2003, Vol. 82 Issue 21, p3656 

    The structure and chemical composition of ZnSe/Ga[sub 1-x]Mn[sub x]As/ZnSe multilayers grown on (100) GaAs substrates are investigated by high-resolution transmission electron microscopy imaging and spectroscopy techniques. While all layers grow epitaxially and the Ga[sub 1-x]Mn[sub x]As layer...

  • Wet-etching fabrication of multilayer GaAlAs/GaAs microtips for scanning near-field optical microscopy. Khalfallah, S.; Gorecki, C.; Podlecki, J.; Nishioka, M.; Kawakatsu, H.; Arakawa, Y. // Applied Physics A: Materials Science & Processing;2000, Vol. 71 Issue 2, p223 

    Abstract. We propose to fabricate GaAlAs/GaAs multilayer microtips for scanning near-field optical microscopy (SNOM) using anisotropic etching. The etching was performed in a solution of H[sub 3]PO[sub 4]:H[sub 2]O[sub 2]:H[sub 2] O operating at a temperature of 10 Celsius. We obtained...

  • Structural Characteristics of Multicomponent GaAs—In[sub x]Ga[sub 1 — ][sub x]As System from Double-Crystal X-ray Diffractometry Data. Afanas’ev, A. M.; Chuev, M. A.; Imamov, R. M.; Lomov, A. A. // Crystallography Reports;Jul2000, Vol. 45 Issue 4, p655 

    The article continues a series of publications on the technologically important multilayer In[sub x]Ga[sub 1-x] As-GaAs/GaAs system with the 3-, 6-, and 9 nm-thick layers (quantum wells). The collimation system of the incident beam is improved. The dimensions of quantum wells and the interfaces...

  • Free-carrier absorption in Be- and C-doped GaAs epilayers and far infrared detector applications. Korotkov, A. L.; Perera, A. G. U.; Shen, W. Z.; Herfort, J.; Ploog, K. H.; Schaff, W. J.; Liu, H. C. // Journal of Applied Physics;3/15/2001, Vol. 89 Issue 6, p3295 

    Far infrared (FIR) absorption, reflection, and transmission in heavily doped p-GaAs multilayer structures have been measured for wavelengths 20-200 μm and compared with the calculated results. Both Be (in the range 3x10[sup 18]-2.6x10[sup 19] cm[sup -3]) and C (1.8x10[sup 18]-4.7x10[sup 19]...

  • Stress distribution mapping of GaAs on Si conformal layers. Martínez, O.; Sanz, L. F.; Jiménez, J.; Martín-Martín, A.; Gérard, B.; Gil-Lafon, E. // Journal of Applied Physics;3/1/2007, Vol. 101 Issue 5, p054901 

    Cathodoluminescence and micro-Raman studies of GaAs on Si layers grown by the conformal method show a characteristic quasiperiodic modulation of the stress distribution perpendicular to the growth direction. Using the capability of the spectral imaging in the cathodoluminescence technique, the...

  • Spatially resolved pump-probe second harmonic generation study of multilayer semiconductor heterostructures. Glinka, Y. D.; Tolk, N. H.; Liu, X.; Sasaki, Y.; Furdyna, J. K. // Applied Physics Letters;12/3/2007, Vol. 91 Issue 23, p231104 

    The transient electric-field-induced second harmonic generation change (TEFISHGC) signals from GaAs/GaSb/InAs heterostructures measured in pump-probe configuration have been applied to monitor the interfacial electric fields arising from the charge separation of pump-induced carriers at the...

  • Dark current and band profiles in low defect density thick multilayered GaAs/InAs self-assembled quantum dot structures for infrared detectors. Asano, Tetsuya; Madhukar, Anupam; Mahalingam, Krishnamurthy; Brown, Gail J. // Journal of Applied Physics;Dec2008, Vol. 104 Issue 11, p113115 

    We report results of a systematic study of the structural and photoresponse properties of GaAs/{InAs quantum dot (QD)/InGaAs quantum well/GaAs} ×m multiple quantum dot (MQD) structures with m from 1 to 20 placed in n-GaAs/i(MQD)/n-GaAs configuration to act as quantum dot infrared...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics