TITLE

Observation of resonant tunneling through a quantized state in InP quantum dots in a double-barrier heterostructure

AUTHOR(S)
Reddy, C. V.; Reddy, C.V.; Narayanamurti, V.; Ryou, J. H.; Ryou, J.H.; Chowdhury, U.; Dupuis, R. D.; Dupuis, R.D.
PUB. DATE
August 2000
SOURCE
Applied Physics Letters;8/21/2000, Vol. 77 Issue 8
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
A direct spectroscopic signature associated with the quantized state of the charge carriers in three-dimensionally confined InP quantum dots (QDs) is reported using a ballistic electron emission microscopy (BEEM)/spectroscopy technique. The self-assembled InP QDs are sandwiched in an AlInP double-barrier heterostructure. The excellent nanometer-scale lateral resolution of the BEEM technique is used to investigate the current transport mechanism by the direct injection of electrons into a single quantum dot. The BEEM spectra taken on and off the dot revealed the presence of a localized state at around 0.1±0.02 eV above the ground state. © 2000 American Institute of Physics.
ACCESSION #
4414491

 

Related Articles

  • The role of transport processes of nonequilibrium charge carriers in radiative properties of arrays of InAs/GaAs quantum dots. Shkolnik, A. S.; Savelyev, A. V.; Karachinsky, L. Ya.; Gordeev, N. Yu.; Seisyan, R. P.; Zegrya, G. G.; Pellegrini, S.; Buller, G. S.; Evtikhiev, V. P. // Semiconductors;Mar2008, Vol. 42 Issue 3, p291 

    The results of time-resolved photoluminescence studies of heterostructures containing monolayer arrays of InAs/GaAs quantum dots are presented. A two-component time dependence of intensity of photoluminescence from the ground state of quantum dots, with characteristic times of the slow component...

  • Negative differential resistance in conductive polymer and semiconducting quantum dot nanocomposite systems. Biswas, S.; Dutta, M.; Stroscio, M. A. // Applied Physics Letters;11/2/2009, Vol. 95 Issue 18, p182102 

    We report the room temperature negative differential resistance (NDR) phenomenon in nanocomposite heterostructures made of semiconducting quantum dots embedded in conductive polymers. The peak to valley ratio of the current is 91 at room temperature which increases to 2965 at 77 K. The current...

  • Long range resonant tunneling in quantum cascade structures. Buffaz, A.; Carras, M.; Doyennette, L.; Trinité, V.; Marcadet, X.; Berger, V. // Applied Physics Letters;4/19/2010, Vol. 96 Issue 16, p162103 

    Tunneling transport in a quantum cascade detector is investigated. With regard to coherent transport in quantum cascade lasers, a Kazarinov–Suris approach R. F. Kazarinov and R. A. Suris, [Sov. Phys. Semicond. 6, 120 (1972)] needs to be modified through the introduction of an additional...

  • Fermi edge singularity in II–VI semiconductor resonant tunneling structures. Rüth, M.; Slobodskyy, T.; Gould, C.; Schmidt, G.; Molenkamp, L. W. // Applied Physics Letters;11/3/2008, Vol. 93 Issue 18, p182104 

    We report on the observation of Fermi edge enhanced resonant tunneling transport in a II–VI semiconductor heterostructure. The resonant transport through a self-assembled CdSe quantum dot survives up to 45 K and probes a disordered two-dimensional-like emitter, which dominates the...

  • Electronic structure of nanometer-scale quantum dots created by a conductive atomic force... Yamauchi, Miyuki; Inoshita, Takeshi // Applied Physics Letters;3/15/1999, Vol. 74 Issue 11, p1582 

    Studies the electronic structure of nanometer-scale quantum dots created by a conductive atomic force microscope tip in resonant tunneling structures. p doping int he cap layer; Achievement of tighter lateral confinement.

  • Designed emitter states in resonant tunneling through quantum dots. Bryllert, T.; Borgstrom, M.; Sass, T.; Gustafson, B.; Landin, L.; Wernersson, L.-E.; Seifert, W.; Samuelson, L. // Applied Physics Letters;4/15/2002, Vol. 80 Issue 15, p2681 

    Resonant tunneling through a single layer of self-assembled quantum dots (QDs) is compared to tunneling through two layers of vertically aligned (stacked) dots. The difference can be viewed as going from a two-dimensional emitter to a zero-dimensional emitter. The temperature dependence of...

  • Fabrication and electrical characterization of planar resonant tunneling devices incorporating... Jung, S.K.; Hyon, C.K.; Park, J.H.; Hwang, S.W.; Ahn, D.; Son, M.H.; Min, B.D.; Yong Kim; Kim, E.K. // Applied Physics Letters;8/23/1999, Vol. 75 Issue 8, p1167 

    Studies planar-type quantum-dot resonant tunneling devices. Fabrication of the devices; Aluminum metal electrodes deposited on a quantum dot wafer to form the devices; Current-voltage characteristics; Differential resistance effects.

  • High peak-to-valley ratios observed in InAs/InP resonant tunneling quantum dot stacks. Borgstrom, M.; Bryllert, T.; Sass, T.; Gustafson, B.; Wernersson, L.-E.; Seifert, W.; Samuelson, L. // Applied Physics Letters;5/21/2001, Vol. 78 Issue 21, p3232 

    Resonant tunneling was observed through single InAs quantum dot (QD) stacks embedded in InP barriers with peak-to-valley ratios as high as 85 at 7 K. Negative differential resistance in the current-voltage [I(V)] characteristics was obtained up to a point above the temperature of liquid...

  • Resonant tunneling of electrons via 20 nm scale InAs quantum dot and magnetotunneling.... Narihiro, M.; Yusa, G. // Applied Physics Letters;1/6/1997, Vol. 70 Issue 1, p105 

    Investigates the resonant tunneling of electrons via 20 nanometer scale indium arsenide quantum dot. Observation of well-resolved composite peak; Examination of the effects of inplane magnetic field; Clarification of the shape of the wave function and spatial extent of the first two electronic...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics