Electrical measurements on p[sup +]-p[sup -]-p[sup +] homoepitaxial diamond capacitors

Inushima, Takashi; Matsushita, Takahiro; Mamin, Rinat F.; Ohya, Seishirou; Shiomi, Hiromu
August 2000
Applied Physics Letters;8/21/2000, Vol. 77 Issue 8
Academic Journal
Conductance versus voltage and capacitance versus voltage (C-V) characteristics are investigated for p[sup +]-p[sup -]-p[sup +] capacitors over a temperature range of 40-300 K, where the p[sup +] layer is heavily doped homoepitaxial diamond and has impurity-band conduction and the p[sup -] layer is slightly doped with valence-band conduction. Above 200 K, the capacitors behave like a semiconductor-insulator-semiconductor diode with interface barrier height of about 0.07 eV. The C-V curve agrees closely with the standard theory of semiconductor-insulator-semiconductor structure and shows formation of the deletion layer at the p[sup +] layer on the interface. The Cole-Cole plot of conductance versus susceptance reveals that there is a virtual trap level in the p[sup -] layer which is located about 0.06 eV above the valence band. © 2000 American Institute of Physics.


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