TITLE

Growth temperature dependence of transport properties of InAs epilayers grown on GaP

AUTHOR(S)
Souw, Victor; Gopal, V.; Chen, E.-H.; Kvam, E. P.; Kvam, E.P.; McElfresh, M.; Woodall, J. M.; Woodall, J.M.
PUB. DATE
August 2000
SOURCE
Applied Physics Letters;8/21/2000, Vol. 77 Issue 8
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Undoped InAs was grown by molecular-beam epitaxy directly on GaP at a set of different substrate temperatures. Transport properties were characterized by means of Hall-effect and resistivity measurements at temperatures between 3 and 300 K. It was observed that samples grown at higher temperatures had lower carrier concentrations, consistent with a decrease of ionized defects. In addition, samples grown at higher temperatures also had higher mobility, consistent with a smaller number of scattering centers. Samples grown at higher temperatures also showed much higher sensitivity of the mobility to the measurement temperature, suggesting a drop in neutral scattering defects. Transmission electron microscopy showed that the samples grown at higher temperatures had a significantly different dislocation microstructure. The observed dislocation microstructure is consistent with the mechanisms proposed for the influence of growth temperature on the variation of carrier concentration and mobility. © 2000 American Institute of Physics.
ACCESSION #
4414488

 

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