Quantum dimensionality, entropy, and the modulation response of quantum dot lasers

Deppe, D. G.; Deppe, D.G.; Huffaker, D. L.; Huffaker, D.L.
November 2000
Applied Physics Letters;11/20/2000, Vol. 77 Issue 21
Academic Journal
Rate equations are used to show that the modulation response of quantum dot lasers can be limited by entropy change due to carrier relaxation from a wetting layer. The entropy change is due to the difference in the spectral density of quantum states between the two-dimensional wetting layer and the zero-dimensional quantum dot. When limited by this effect, the laser's 3 dB modulation response becomes strongly temperature dependent. © 2000 American Institute of Physics.


Related Articles

  • Publisher's Note: "Tuning the external optical feedback-sensitivity of a passively mode-locked quantum dot laser" [Appl. Phys. Lett. 105, 041112 (2014)].  // Applied Physics Letters;9/1/2014, Vol. 105 Issue 9, p1 

    A correction to the article "Tuning the external optical feedback-sensitivity of a passively mode-locked quantum dot laser," by R. Raghunathan, F. Grillot, J.K. Mee, D. Murrell, V. Kovanis and L.F. Lester is presented.

  • Experimental investigation of the effect of wetting-layer states on the gain–current characteristic of quantum-dot lasers. Matthews, D. R.; Summers, H. D.; Smowton, P. M.; Hopkinson, M. // Applied Physics Letters;12/23/2002, Vol. 81 Issue 26, p4904 

    Using experimental measurements of the gain-current characteristic as a function of temperature in InGaAs quantum-dot lasers, we demonstrate that it is the population of wetting-layer states that leads to a saturation of the population inversion in dot states and hence to the saturation of gain...

  • Temperature dependence of the gain of lasers based on quantum-dot arrays with an inhomogeneously broadened density of states. Zhukov, A. E.; Kovsh, A. R.; Ustinov, V. M. // Semiconductors;Nov99, Vol. 33 Issue 11, p1260 

    A model making it possible to describe analytically the temperature dependence of the optical gain and threshold current density in lasers based on quantum-dot arrays characterized by inhomogeneous broadening of the density of states is proposed. At high temperatures the dependence obtained is...

  • High Efficiency (?[sub D] > 80%) Long Wavelength (? > 1.25 �m) Quantum Dot Diode Lasers on GaAs Substrates. Mikhrin, S. S.; Zhukov, A. E.; Kovsh, A. R.; Maleev, N. A.; Vasil�ev, A. P.; Semenova, E. S.; Ustinov, V. M.; Kulagina, M. M.; Nikitina, E. V.; Soshnikov, I. P.; Shernyakov, Yu. M.; Livshits, D. A.; Kryjanovskaya, N. V.; Sizov, D. S.; Maksimov, M. V.; Tsatsul�nikov, A. F.; Ledentsov, N. N.; Bimberg, D.; Alferov, Zh. I. // Semiconductors;Nov2002, Vol. 36 Issue 11, p1315 

    Diode lasers based on several layers of self-organized quantum dots (QD) on GaAs substrates were studied. The lasing wavelength lies in the range ? = 1.25-1.29 �m, depending on the number of QD layers and optical losses. A record external differential efficiency of 88% and the...

  • Quantum dot lasers: Theory and experiment. Bimberg, D.; Grundmann, M.; Heinrichsdorff, F.; Ledentsov, N. N.; Ribbat, Ch.; Sellin, R.; Alferov, Zh. I.; Kop’ev, P. S.; Maximov, M. V.; Ustinov, V. M.; Zhukov, A. E.; Lott, J. A. // AIP Conference Proceedings;2001, Vol. 560 Issue 1, p178 

    Using of structures with size quantization in all three directions, or quantum dots (QD's) allows exciting possibilities in device engineering. Semiconductor heterostructures with self-organized QDs have experimentally exhibited properties expected for zero-dimensional systems. When used as...

  • Light emission spectra of columnar-shaped self-assembled InGaAs/GaAs quantum-dot lasers: Effect... Sugawara, Mitsuru; Mukai, Kohki // Applied Physics Letters;3/15/1999, Vol. 74 Issue 11, p1561 

    Studies light emission spectra of columnar-shaped self-assembled InGaAs/GaAs quantum-dot lasers. Effect of homogeneous broadening of the optical gain on lasing characteristics; Factors affecting the performance of quantum-dot lasers.

  • Design parameters for lateral carrier confinement in quantum-dot lasers.  // Applied Physics Letters;5/10/1999, Vol. 74 Issue 19, p2752 

    Studies the design parameters for lateral carrier confinement in quantum dot lasers. Promise of ultralow threshold and high characteristic temperature; Reduction of optical losses and current spreading; Cathodoluminescence results.

  • High-performance GaInAs/GaAs quantum-dot lasers based on a single active layer. Schafer, F.; Reithmaier, J.P.; Forchel, A. // Applied Physics Letters;5/17/1999, Vol. 74 Issue 20, p2915 

    Examines GaInAs/GaAs quantum-dot lasers fabricated by self-organized growth in a molecular beam epitaxy system. Current densities; Internal quantum efficiencies; Ground-state lasing of the quantum dots.

  • Room-temperature continuous-wave operation of a single-layered 1.3 mum quantum dot laser. Gyoungwon Park; Shchekin, Oleg B.; Csutak, Sebastion; Huffaker, Diana L.; Deppe, Dennis G. // Applied Physics Letters;11/22/1999, Vol. 75 Issue 21, p3267 

    Studies the room-temperature continuous wave operation of a single-layered 1.3 mum quantum dot laser. Threshold current for a single layer active region with p-up mounting; Minimum room temperature threshold current density; Cryogenic and temperature dependent measurements performed on...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics