Infrared absorption study of nitrogen in N-implanted GaAs and epitaxially grown GaAs[sub 1-x]N[sub x] layers

Alt, H. Ch.; Alt, H.Ch.; Egorov, A. Yu.; Egorov, A.Yu.; Riechert, H.; Wiedemann, B.; Meyer, J. D.; Meyer, J.D.; Michelmann, R. W.; Michelmann, R.W.; Bethge, K.
November 2000
Applied Physics Letters;11/20/2000, Vol. 77 Issue 21
Academic Journal
Fourier-transform infrared absorption measurements have been carried out in the two-phonon region of GaAs. Implantation of the nitrogen isotopes [sup 14]N and [sup 15]N, respectively, into bulk GaAs shows that a local vibrational mode at 471 cm[sup -1] ([sup 14]N) is due to isolated nitrogen. The band is also found in GaAs[sub 1-x]N[sub x](0


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