In-plane polarization anisotropy of the spontaneous emission of M-plane GaN/(Al,Ga)N quantum wells

Rau, B.; Rau, B; Waltereit, P.; Brandt, O.; Ramsteiner, M.; Ploog, K. H.; Ploog, K.H.; Puls, J.; Henneberger, F.
November 2000
Applied Physics Letters;11/20/2000, Vol. 77 Issue 21
Academic Journal
We study the in-plane polarization of wurtzite GaN/(Al, Ga)N multiple quantum wells. Identical M-plane (11¯00) and C-plane (0001) structures are grown by plasma-assisted molecular-beam epitaxy on γ-LiAlO[sub 2](100) and 6H-SiC(0001), respectively. While the emission from the conventional [0001] oriented wells is isotropic within the growth plane, we observe a strong polarization anisotropy of over 90% for the M-plane sample. The luminescence is polarized normal to [0001] and shows no spectral shift with polarization angle, i.e., it originates solely from A excitons (p[sub x] and p[sub y] valence band states). The deviation of the polarization degree from unity is attributed to the mixing with p[sub z] valence band states due to quantum confinement. © 2000 American Institute of Physics.


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