Side-by-side silicon carbide-silica biaxial nanowires: Synthesis, structure, and mechanical properties

Wang, Z. L.; Wang, Z.L.; Dai, Z. R.; Dai, Z.R.; Gao, R. P.; Gao, R.P.; Bai, Z. G.; Bai, Z.G.; Gole, J. L.; Gole, J.L.
November 2000
Applied Physics Letters;11/20/2000, Vol. 77 Issue 21
Academic Journal
Elevated-temperature synthesis has been used to generate side-by-side biaxially structured silicon carbide-silica nanowires. The axial growth direction approaches [311] for nanowires with a high density of microtwins and is [211] for defect-free nanowires. The structure of these nanowires, their cross-sectional shape, and their structural transformation between a biaxial and coaxial configuration have been studied by transmission electron microscopy. The Young's modulus of the biaxially structured nanowires was measured to be 50-70 GPa depending on the size of the nanowire. © 2000 American Institute of Physics.


Related Articles

  • Comparison of nitrogen incorporation in SiO[sub 2]/SiC and SiO[sub 2]/Si structures. McDonald, K.; Huang, M. B.; Weller, R. A.; Feldman, L. C.; Williams, J. R.; Stedile, F. C.; Baumvol, I. J. R.; Radtke, C. // Applied Physics Letters;1/31/2000, Vol. 76 Issue 5, p568 

    The nitrogen content of SiO[sub 2]/SiC (4H) structures annealed in NO and N[sub 2]O has been measured using nuclear reaction analysis. Samples were annealed in [sup 15]N[sup 18]O or [sup 15]N[sub 2]O at 1000 °C at a static pressure of 10 mbar for either 1 or 4 h. Annealing in N[sub 2]O...

  • Synthesis and characterization of SiO nano- and microwires by a non-catalytic technique. Casalegno, V.; Rizzo, S.; Canavese, G.; Ventrella, A.; Salvo, M.; Ferraris, M. // Journal of Materials Science;Sep2013, Vol. 48 Issue 18, p6108 

    In this paper, we report on the synthesis of pure silica (SiO) nano- and microwires by a non-catalytic process. The structure, morphology and properties of the products were examined by scanning electron microscopy, transmission electron microscopy, and energy dispersive spectroscopy. The...

  • Synthesis and Growth Mechanism of SiC/SiO2 Core-Shell Nanowires by Thermal Evaporation Method. Noppasint Jiraborvornpongsa; Masamitsu Imai; Katsumi Yoshida; Toyohiko Yano // Key Engineering Materials;2014, Vol. 617, p195 

    SiC/SiO2 core-shell nanowires (SiCNWs) were fabricated by thermal evaporation method without any catalyst using pre-oxidized silicon powder and methane (CH4) gas as precursors. The reaction temperature was 1340° C in an inert atmosphere. The SiCNWs produced by this process had a single...

  • Synthesizing boron nitride nanotubes filled with SiC nanowires by using carbon nanotubes as... Weiqiang Han; Redlich, Philipp; Ernst, Frank; Ruhle, Manfred // Applied Physics Letters;9/27/1999, Vol. 75 Issue 13, p1875 

    Describes a method to synthesize silicon carbide-filled boron nitride nanotubes simultaneously in high yield by using carbon nanotubes as templates. Combining both carbon nanotube-substitution reaction and confined reaction.

  • Infrared distributed Bragg reflectors based on amorphous SiC/SiO[sub 2] heterostructures. Convertino, A.; Valentini, A. // Applied Physics Letters;5/26/1997, Vol. 70 Issue 21, p2799 

    Examines the infrared distributed Bragg reflectors (DBR) based on amorphous silicon carbide/silicon dioxide semiconductor heterostructures. Composition of the DBR; Reproduction of the reflectivity spectrum; Advantages of the semiconductor Bragg reflectors.

  • Fowler–Nordheim tunneling of holes through thermally grown SiO[sub 2] on p[sup +] 6H–SiC. Waters, Richard; Van Zeghbroeck, Bart // Applied Physics Letters;12/21/1998, Vol. 73 Issue 25 

    Fowler–Nordheim tunneling of holes through thermally grown silicon dioxide on 6H–silicon carbide is reported. Oxides of 5.2, 10, and 14.2 nm thickness were grown on the p[sup +] face of a p[sup +]n SiC junction. The p[sup +]n junction served to separate the electron and hole...

  • Kinetics of NO nitridation in SiO[sub 2]/4H–SiC. McDonald, K.; Feldman, L. C.; Weller, R. A.; Chung, G. Y.; Tin, C. C.; Williams, J. R. // Journal of Applied Physics;2/15/2003, Vol. 93 Issue 4, p2257 

    The kinetics of nitrogen incorporation in SiO[sub 2]/4H-SiC using NO are presented. Samples were annealed in NO at pressures of 100 Torr and 1 atm, at temperatures from 1050 to 1175 °C, and for times from 0.5 to 6 h. Annealing in NO incorporates ∼10[sup 14] cm[sup -2] of nitrogen at the...

  • A new approach to fabricate SiC nanowire-embedded dense SiC matrix/carbon fiber composite. Prakash, Jyoti; Dasgupta, Kinshuk; Tripathi, B.; Bahadur, J.; Ghosh, Sunil; Chakravartty, J. // Journal of Materials Science;Oct2014, Vol. 49 Issue 19, p6784 

    A novel and simple sol-gel route has been used for the fabrication of composite structure composed of carbon fibers and silicon carbide nanowires embedded in dense silicon carbide matrix. The carbonaceous silica sol was impregnated in the carbon fiber preform at atmospheric pressure. The sol...

  • Field-emission characteristics of SiC nanowires prepared by chemical-vapor deposition. Wong, K.W.; Xhou, X.T.; Au, Frederick C.K.; Lai, H.L.; Lee, C.S.; Lee, S.T. // Applied Physics Letters;11/8/1999, Vol. 75 Issue 19, p2918 

    Details the characteristics of silicon carbide nanowires prepared by chemical vapor deposition. Good field-emitting properties shown by the nanowired revealed by current-voltage characteristics; Ease of preparation; Great potential shown by the nanowires in the area of electron field-emitting...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics