TITLE

Interfacial stability and structure in InAs/GaAs(111)A heteroepitaxy: Effects of buffer layer thickness and film compositional grading

AUTHOR(S)
Zepeda-Ruiz, Luis A.; Pelzel, Rodney I.; Weinberg, W. Henry; Maroudas, Dimitrios
PUB. DATE
November 2000
SOURCE
Applied Physics Letters;11/20/2000, Vol. 77 Issue 21
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Interfacial stability and the morphology of the epitaxial film surface have been studied in InAs/GaAs(111)A heteroepitaxy based on atomistic simulations and scanning tunneling microscopy. Effects of buffer layer thickness were examined by analyzing two heteroepitaxial systems consisting of thin and thick GaAs buffer layers. In both cases, one monolayer of In[sub 0.50]Ga[sub 0.50]As is grown initially on the buffer layer prior to InAs growth. Our results indicate that film compositional grading and the resulting segregation of In atoms at defects in the semicoherent interface can be used effectively in conjunction with the mechanical compliance of thin buffer layers to delay the completion of the coherent-to-semicoherent interfacial transition. © 2000 American Institute of Physics.
ACCESSION #
4414458

 

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