Thermal stability of Cu/Ta/GaAs multilayers

Chen, Chang-You; Chang-You Chen; Chang, Li; Li Chang; Chang, Edward Y.; Chen, Szu-Houng; Szu-Houng Chen; Chang, Der-Fu; Der-Fu Chang
November 2000
Applied Physics Letters;11/20/2000, Vol. 77 Issue 21
Academic Journal
Copper metallization for GaAs was evaluated by using Cu/Ta/GaAs multilayers for its thermal stability. A thin Ta layer of 40 nm was sputtered on the GaAs substrate as the diffusion barrier before copper film metallization. As judged from sheet resistance, x-ray diffraction, Auger electron spectroscopy and transmission electron microscopy, the Cu/Ta films with GaAs were very stable up to 500 °C without migration into GaAs. After 550 °C annealing, the interfacial mixing of Ta with GaAs substrate occurred, resulting in the formation of TaAs[sub 2]. At 600 °C annealing, the reaction GaAs with Ta and Cu formed TaAs, TaAs[sub 2], and Cu[sub 3]Ga, resulting from Cu migration and interfacial instability. © 2000 American Institute of Physics.


Related Articles

  • Surface-contamination-related thermal instability in GaAs. Wang, Faa-Ching; Rau, Mann-Fu; Liao, De-Dui; Carter, Ronald // Journal of Applied Physics;8/15/1990, Vol. 68 Issue 4, p1757 

    Examines surface-contamination-related thermal instability in gallium arsenide (GaAs). Background on the electrical properties of semi-insulating GaAs materials; Application of a simulated thermal conversion that uses intentional carbon-ion implantation in determining possible contaminants;...

  • Characterization and thermal instability of low-resistivity carbon doped GaAs grown by low-pressure organometallic vapor phase epitaxy. Enquist, P. // Journal of Applied Physics;1/15/1992, Vol. 71 Issue 2, p704 

    Presents information on a study conducted on heavily carbon-doped gallium arsenide. Methods used to obtain carbon doping; Implications of the thermal instability of the gallium arsenide to annealing cycles; Electrical activity of carbon in the layers used in the study.

  • Thermal and spectral dependence of low-frequency oscillations in semi-insulating GaAs:In. Johnson, D. A.; Puechner, R. A.; Maracas, G. N. // Journal of Applied Physics;1/1/1990, Vol. 67 Issue 1, p300 

    Investigates the thermal dependence of low-frequency current oscillations for semi-insulating (SI) gallium arsenide (GaAs) resistor structures illuminated with sub-band-gap light. Spectral dependence of the low-frequency current oscillations in SI GaAs; Proportion of the oscillation frequency...

  • States of copper during diffusion in semi-insulating GaAs. Tin, C. C.; Teh, C. K.; Weichman, F. L. // Journal of Applied Physics;1/15/1988, Vol. 63 Issue 2, p355 

    Investigates the states of copper during diffusion in semi-insulating gallium arsenide (GaAs). Issues on the role of copper in gallium arsenide; Details on the experiment; Discussion on the result of the study.

  • Quenching of EL2 defect-induced luminescence in gallium arsenide by copper atoms. Vorobkalo, F. M.; Glinchuk, K. D.; Prokhorovich, A. V. // Semiconductors;Sep97, Vol. 31 Issue 9, p893 

    It is shown that the introduction of copper atoms into gallium arsenide crystals containing EL2 antisite defects results in virtually complete vanishing of the EL2-induced luminescence bands with radiation maxima at h v[sub m] = 0.63 and 0.68 eV. This occurs as a result of the deactivation of...

  • Enhancement of luminescence in GaAs by low levels of Cu. Third, C.E.; Weinberg, F.; Thewalt, M.; Young, L. // Applied Physics Letters;2/18/1991, Vol. 58 Issue 7, p714 

    Investigates the enhancement of luminescence in gallium arsenide (GaAs) by low levels of copper (Cu). Proposal that the Cu diffuses into GaAs during annealing; Treatment of samples to alter the residual Cu prior to annealing; Effect of the removal of Cu on the depth of the bright bands.

  • Electronic mode absorption at multi-acceptor levels of copper-doped GaAs. Kang, Nam Soo; Zirkle, Thomas E.; Schroder, Dieter K. // Journal of Applied Physics;11/1/1990, Vol. 68 Issue 9, p4772 

    Presents a study that observed an interesting feature in the mid-infrared region of copper-doped semi-insulating liquid encapsulated Czochralski grown gallium arsenide at liquid helium temperature. Use of backside mechanical damage in gettering copper; Gradual decrease of the transmittance of...

  • Study of defects in GaAs by differential thermal analysis. Lim, H.-J.; von Bardeleben, H. J.; Bourgoin, J. C. // Journal of Applied Physics;10/1/1987, Vol. 62 Issue 7, p2738 

    Presents a study that applied differential thermal analysis (DTA) in measuring defect total energies in a semiconductor material. Background on the application of DTA on gallium arsenide; Assessment of the importance of measuring defect total energy; Investigation of electron...

  • Rapid thermal annealing of GaAs in a graphite susceptor—comparison with proximity annealing. Pearton, S. J.; Caruso, R. // Journal of Applied Physics;7/15/1989, Vol. 66 Issue 2, p663 

    Presents a study which shown repaid thermal annealing of gallium arsenide with an enclosed, SiC-coated graphic susceptor to eliminate slip formation during implant activation treatments and to provide much better protection against surface degradation at the edges of wafers compared to more...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics