TITLE

Thermal stability of Cu/Ta/GaAs multilayers

AUTHOR(S)
Chen, Chang-You; Chang-You Chen; Chang, Li; Li Chang; Chang, Edward Y.; Chen, Szu-Houng; Szu-Houng Chen; Chang, Der-Fu; Der-Fu Chang
PUB. DATE
November 2000
SOURCE
Applied Physics Letters;11/20/2000, Vol. 77 Issue 21
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Copper metallization for GaAs was evaluated by using Cu/Ta/GaAs multilayers for its thermal stability. A thin Ta layer of 40 nm was sputtered on the GaAs substrate as the diffusion barrier before copper film metallization. As judged from sheet resistance, x-ray diffraction, Auger electron spectroscopy and transmission electron microscopy, the Cu/Ta films with GaAs were very stable up to 500 °C without migration into GaAs. After 550 °C annealing, the interfacial mixing of Ta with GaAs substrate occurred, resulting in the formation of TaAs[sub 2]. At 600 °C annealing, the reaction GaAs with Ta and Cu formed TaAs, TaAs[sub 2], and Cu[sub 3]Ga, resulting from Cu migration and interfacial instability. © 2000 American Institute of Physics.
ACCESSION #
4414453

 

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