Nanoindentation of epitaxial GaN films

Kucheyev, S. O.; Kucheyev, S.O.; Bradby, J. E.; Bradby, J.E.; Williams, J. S.; Williams, J.S.; Jagadish, C.; Toth, M.; Phillips, M. R.; Phillips, M.R.; Swain, M. V.; Swain, M.V.
November 2000
Applied Physics Letters;11/20/2000, Vol. 77 Issue 21
Academic Journal
Wurtzite GaN films grown on sapphire substrates are studied by nanoindentation with a spherical indenter. No systematic dependence of the mechanical properties of GaN epilayers on the film thickness (at least for thicknesses from 1.8 to 4 μm) as well as on doping type is observed. Slip is identified as one of the physical mechanisms responsible for plastic deformation of GaN and may also contribute to the "pop-in" events observed during loading. No visible material cracking is found even after indentations at high loads (900 mN), but a pronounced elevation of the material surrounding the impression is observed. © 2000 American Institute of Physics.


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