TITLE

Comparative study of GaN and AlN nucleation layers and their role in growth of GaN on sapphire by metalorganic chemical vapor deposition

AUTHOR(S)
Lorenz, K.; Gonsalves, M.; Kim, Wook; Wook Kim; Narayanan, V.; Mahajan, S.
PUB. DATE
November 2000
SOURCE
Applied Physics Letters;11/20/2000, Vol. 77 Issue 21
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Microstructures of low-temperature GaN and AlN nucleation layers (NLs) grown on sapphire by metalorganic chemical vapor deposition and changes in these microstructures and surface morphologies upon annealing at high temperature (HT) were investigated by transmission electron microscopy and atomic force microscopy. Upon annealing, both NLs undergo changes using different pathways, resulting in islands submerged in continuous GaN and AlN NLs. Possible explanations for the rearrangement of the microstructure during annealing of the NLs are suggested for each case. The step flow growth of HT-GaN on GaN NLs initiates directly from the step ledges of the existing rounded nucleation islands, while nucleation of GaN islands on the undulated surface precedes the step flow growth on AlN NLs. The earlier appearance of flat-top islands on AlN NLs was accounted for by localized growth enhancement due to the surface energy difference between AlN and GaN. © 2000 American Institute of Physics.
ACCESSION #
4414444

 

Related Articles

  • Influence of AIN nucleation layers on growth mode and strain relief of GaN grown on 6H - SiC (0001). Waltereit, P.; Brandt, O. // Applied Physics Letters;6/14/1999, Vol. 74 Issue 24, p3660 

    Studies the growth mode and strain state of gallium nitride (GaN) layers grown either directly on 6H-SiC(0001) or on thin, coherently strained aluminum nitride nucleation layers. Compressive lattice mismatch strain; Strain state of the GaN layer determined by its growth mode; High-energy...

  • Epitaxial growth of AlN films via plasma-assisted atomic layer epitaxy. Nepal, N.; Qadri, S. B.; Hite, J. K.; Mahadik, N. A.; Mastro, M. A.; Eddy, C. R. // Applied Physics Letters;8/19/2013, Vol. 103 Issue 8, p082110 

    Thin AlN layers were grown at 200-650 °C by plasma assisted atomic layer epitaxy (PA-ALE) simultaneously on Si(111), sapphire ([formula]), and GaN/sapphire substrates. The AlN growth on Si(111) is self-limited for trimethyaluminum (TMA) pulse of length > 0.04 s, using a 10 s purge. However,...

  • The influence of AlN buffer over the polarity and the nucleation of self-organized GaN nanowires. Auzelle, Thomas; Haas, Benedikt; Minj, Albert; Bougerol, Catherine; Rouviére, Jean-Luc; Cros, Ana; Colchero, Jaime; Daudin, Bruno // Journal of Applied Physics;6/28/2015, Vol. 117 Issue 24, p245303-1 

    We experimentally investigate the influence of AlN buffer growth on the nucleation and the polarity of a self-organized assembly of GaN nanowires (NWs) grown on Si. Two complementary growth mechanisms for AlN buffer deposited on Si are demonstrated. Both emphasize the aggregation of Si on the...

  • Misfit defect formation in thick GaN layers grown on sapphire by hydride vapor phase epitaxy. Valcheva, E.; Paskova, T.; Persson, P. O. A˚.; Hultman, L.; Monemar, B. // Applied Physics Letters;3/4/2002, Vol. 80 Issue 9, p1550 

    The nucleation and microstructure of large-scale columnar domains present in hydride vapor phase epitaxial (HPVE)-GaN layers grown directly on sapphire have been studied using cathodoluminescence and transmission electron microscopy. The domains are distributed in a quasicontinuous layer close...

  • Band gap engineering in amorphous Al[sub x]Ga[sub 1-x]N: Experiment and ab initio calculations. Chen, Hong; Hong Chen; Chen, Kuiying; Kuiying Chen; Drabold, D. A.; Drabold, D.A.; Kordesch, M. E.; Kordesch, M.E. // Applied Physics Letters;8/21/2000, Vol. 77 Issue 8 

    Amorphous alloys of aluminum nitride and gallium nitride deposited at 100 K at compositions ranging from pure AlN to pure GaN with optical band gaps which vary linearly with composition from 3.27 eV (a-GaN) to 5.95 eV (a-AlN) have been synthesized. Ab initio molecular dynamics calculations for...

  • Elastic properties of gallium and aluminum nitrides. Davydov, S. Yu.; Solomonov, A. V. // Technical Physics Letters;Aug99, Vol. 25 Issue 8, p601 

    The Keating model is used to calculate the elastic constants of GaN and AlN for sphalerite and wurtzite structures. The following values of the elastic constants (in gigapascals) were obtained for cubic gallium and aluminum nitride: C[sup 11] = 325 and 322, C[sub 12]= 142 and 156, C[sub 44] =...

  • Buffer layer strain transfer in AIN/GaN near critical thickness. Kim, Chinkyo; Myoung, Jaemin // Journal of Applied Physics;4/15/1999 Part 1 of 2, Vol. 85 Issue 8, p4040 

    Presents information on a study which investigated the strain relaxation of components of a gallium nitride/aluminum nitride bilayer on sapphire as a function of the gallium nitride layer thickness. Consideration of the variation of the in-plane lattice parameter among the different samples;...

  • Phonon excitations and thermodynamic properties of cubic III nitrides. Talwar, D. N. // Applied Physics Letters;3/4/2002, Vol. 80 Issue 9, p1553 

    A comprehensive study of phonon excitation and thermodynamic properties of cubic GaN and A1N is reported using a rigid-ion model (RIM) in the quasiharmonic approximation. The data on elastic constants and phonon modes at critical points at ambient and high pressures have allowed us to optimize...

  • Erratum: “Micro-Raman investigation of strain in GaN and Al[sub x]Ga[sub 1-x]N/GaN heterostructures grown on Si(111)” [J. Appl. Phys. 92, 3503 (2002)]. Tripathy, S.; Chua, S. J.; Chen, P.; Miao, Z. L. // Journal of Applied Physics;1/1/2003, Vol. 93 Issue 1, p789 

    © 2003 American Institute of Physics.

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics