Imaging phonon drag in gallium nitride

Stanton, N. M.; Stanton, N.M.; Akimov, A. V.; Akimov, A.V.; Kent, A. J.; Kent, A.J.; Cavill, S. A.; Cavill, S.A.; Cheng, T. S.; Cheng, T.S.; Foxon, C. T.; Foxon, C.T.
November 2000
Applied Physics Letters;11/20/2000, Vol. 77 Issue 21
Academic Journal
Phonon-drag imaging has been used to study the electron-phonon interaction in a low-mobility n-type gallium nitride (GaN) epilayer grown by molecular beam epitaxy on sapphire. Currents up to j=4.7x10[sup 3] A/m[sup 2] were induced by transverse acoustic phonon drag of electrons in this structure. Such currents are much bigger than predicted by the conventional theory of electron-phonon interaction. We explain this difference by the fact that, in low-mobility GaN, the 2k[sub F] cutoff for electron-phonon transitions is relaxed. © 2000 American Institute of Physics.


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