Scanning tunneling microscopy investigation of truncated InP/GaInP[sub 2] self-assembled islands

Ballet, P.; Smathers, J. B.; Smathers, J.B.; Yang, H.; Workman, C. L.; Workman, C.L.; Salamo, G. J.; Salamo, G.J.
November 2000
Applied Physics Letters;11/20/2000, Vol. 77 Issue 21
Academic Journal
We present an investigation of the morphology of InP/GaInP three-dimensional (3D) islands obtained by molecular beam epitaxy. This material system should represent the counterpart of the InGaAs/GaAs system for the visible range. The islands are found to be truncated pyramids with observable phosphorous-rich surface reconstruction on top. The investigation of the effect of P overpressure reveals a path to achieve extremely homogeneous 3D islands through an island shape transition. These results help us understand the emerging issue of 3D island shape transition. © 2000 American Institute of Physics.


Related Articles

  • Identification of the major residual donor in unintentionally doped InP grown by molecular beam epitaxy. Martin, T.; Stanley, C. R.; Iliadis, A.; Whitehouse, C. R.; Sykes, D. E. // Applied Physics Letters;5/15/1985, Vol. 46 Issue 10, p994 

    The properties of InP grown unintentionally doped by molecular beam epitaxy are generally limited by residual free-carrier concentrations (ND-NA)∼1016 cm-3. By combining two depth profiling techniques, secondary ion mass spectrometry and electrochemical capacitance-voltage measurements, the...

  • Metalorganic molecular beam epitaxy of heavily carbon-doped InP using tertiarybutyIphosphine as.... Je-Hwan Oh; Jun-ichi Shirakashi // Applied Physics Letters;5/22/1995, Vol. 66 Issue 21, p2891 

    Performs metalorganic molecular beam epitaxy (MOMBE) of carbon-doped indium phosphide (InP) using tertiarybutylphosphine (TBP) as carbon auto-doping source. Characteristics of InP carbon doping in MOMBE growth; Effect of growth temperature on electron concentration of carbon-doped InP;...

  • Dislocation generation mechanisms of InxGa1-xAs (0≤x≤1) epilayers grown on (100) InP substrates by molecular beam epitaxy. Chang, Shou-Zen; Lee, Si-Chen; Chen, C. R.; Chen, L. J. // Journal of Applied Physics;2/1/1994, Vol. 75 Issue 3, p1511 

    Presents a study that investigated the mechanisms of strain relaxation and dislocation generation for the epilayers grown on indium phosphide substrates by molecular beam epoitaxy. Details of the experiments; Results; Discussion.

  • Molecular beam epitaxial growth and low-temperature optical characterization of GaAs0.5Sb0.5 on InP. Klem, J.; Huang, D.; Morkoç, H.; Ihm, Y. E.; Otsuka, N. // Applied Physics Letters;5/11/1987, Vol. 50 Issue 19, p1364 

    GaAs1-xSbx nearly lattice matched to InP substrates has been grown by molecular beam epitaxy. For a given As and Sb flux, the GaSb mole fraction is shown to be sensitive to the Ga flux rate. Low-temperature photoluminescence spectra exhibit a dominant emission line at 0.780–0.790 eV with...

  • Magnetospectroscopy of high-purity InP grown by gas source molecular beam epitaxy. Shi, X. H.; Liu, P. L.; Shi, G. L.; Hu, C. M.; Chen, Z. H.; Shen, S. C.; Chen, J. X.; Xin, H. P.; Li, A. Z. // Applied Physics Letters;3/23/1998, Vol. 72 Issue 12 

    Magneto-photoconductivity spectra related to the bound phonons and resonant polaron effect on Si donors in high-purity InP have been investigated. Not only the transition from the 1s ground state to bound phonon state (1s+LO) of Si donors, but also the antilevel crossings of the (3, 1, 0)...

  • Growth of InGaAs/InAlAs quantum wells on InP patterned substrates by molecular beam epitaxy. Turco, F. S.; Tamargo, M. C.; Hwang, D. M.; Nahory, R. E.; Werner, J.; Kash, K.; Kapon, E. // Applied Physics Letters;1/1/1990, Vol. 56 Issue 1, p72 

    We have grown InGaAs/InAlAs quantum wells and InGaAs, InAlAs single layers over InP nonplanar substrates. Photoluminescence, transmission electron microscopy, and energy-dispersive x-ray analysis give evidence for large lateral thickness and compositional variations, which lead to in situ...

  • Formation of P precipitates during annealing of InP grown by gas source molecular beam epitaxy.... Claverie, A.; Crestou, J.; Garcia, J.C. // Applied Physics Letters;4/5/1993, Vol. 62 Issue 14, p1638 

    Describes the formation of phosphorus precipitates during the annealing of monocrystalline InP grown by gas source molecular beam epitaxy. Influence of precipitate formation on crystal relaxation; Electrical properties of the precipitates.

  • Molecular beam epitaxy of GaSb0.5As0.5 and AlxGa1-xSbyAs1-y lattice matched to InP. Chiu, T. H.; Tsang, W. T.; Chu, S. N. G.; Shah, J.; Ditzenberger, J. A. // Applied Physics Letters;2/15/1985, Vol. 46 Issue 4, p408 

    Single crystal films of GaSb[sub y] As[sub 1-y] and Al[sub x] Ga[sub 1-x] Sb[sub y] As[sub 1-y] alloys having compositions within the miscibility gap can be prepared using nonequilibrium growth techniques. We have successfully grown these alloys lattice matched to InP by molecular beam epitaxy....

  • Growth and characterization of AlGaInAs lattice matched to InP grown by molecular-beam epitaxy. Praseuth, J. P.; Joncour, M. C.; Gérard, J. M.; Hénoc, P.; Quillec, M. // Journal of Applied Physics;1/15/1988, Vol. 63 Issue 2, p400 

    Investigates the growth and characterization of aluminum compound lattice matched in indium phosphide grown by molecular-beam epitaxy. Crystalline quality of the compound; Methodology of the study; Discussion on the result of the study.


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics