TITLE

Electrical conductivity enhancement in nanocrystalline (RE[sub 2]O[sub 3])[sub 0.08](ZrO[sub 2])[sub 0.92] (RE=Sc, Y) thin films

AUTHOR(S)
Zhang, Y. W.; Zhang, Y.W.; Jin, S.; Yang, Y.; Li, G. B.; Li, G.B.; Tian, S. J.; Tian, S.J.; Jia, J. T.; Jia, J.T.; Liao, C. S.; Liao, C.S.; Yan, C. H.; Yan, C.H.
PUB. DATE
November 2000
SOURCE
Applied Physics Letters;11/20/2000, Vol. 77 Issue 21
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Dense, crack-free, uniform, and homogeneous (RE[sub 2]O[sub 3])[sub 0.08](ZrO[sub 2])[sub 0.92] (RE=Sc, Y) nanocrystalline thin films were fabricated by a simple sol-gel method and characterized by impedance studies. At temperatures beyond 600 °C, the electrical conductivity of (Sc[sub 2]O[sub 3])[sub 0.08](ZrO[sub 2])[sub 0.92] and (Y[sub 2]O[sub 3])[sub 0.08](ZrO[sub 2])[sub 0.92] nanocrystals in pure cubic phase was ten times higher than that of the corresponding bulk materials. The decrease of grain boundary resistance related to interfacial effect is predominately responsible for the electrical conductivity enhancement. © 2000 American Institute of Physics.
ACCESSION #
4414438

 

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