TITLE

Hole transport through single and double SiGe quantum dots

AUTHOR(S)
Cain, Paul A.; Ahmed, Haroon; Williams, David A.; Bonar, Janet M.
PUB. DATE
November 2000
SOURCE
Applied Physics Letters;11/20/2000, Vol. 77 Issue 21
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We report on measurements of hole transport through a double quantum dot structure formed by trench isolation from a SiGe:Si heterostructure. A period change in the Coulomb oscillations is observed upon changing a gate bias, which is attributed to the lowering of one of the tunnel barriers, effectively changing the device to a single quantum dot. Accompanying the period change is a significant change in the level of noise associated with the oscillations. This is explained by a carrier energy filtering effect in the double dot compared with the single dot, caused by the slight difference in energy level spacing in each quantum dot. © 2000 American Institute of Physics.
ACCESSION #
4414436

 

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