Hole transport through single and double SiGe quantum dots

Cain, Paul A.; Ahmed, Haroon; Williams, David A.; Bonar, Janet M.
November 2000
Applied Physics Letters;11/20/2000, Vol. 77 Issue 21
Academic Journal
We report on measurements of hole transport through a double quantum dot structure formed by trench isolation from a SiGe:Si heterostructure. A period change in the Coulomb oscillations is observed upon changing a gate bias, which is attributed to the lowering of one of the tunnel barriers, effectively changing the device to a single quantum dot. Accompanying the period change is a significant change in the level of noise associated with the oscillations. This is explained by a carrier energy filtering effect in the double dot compared with the single dot, caused by the slight difference in energy level spacing in each quantum dot. © 2000 American Institute of Physics.


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