Low-resistance ohmic contacts on p-type GaN using Ni/Pd/Au metallization

Chu, Chen-Fu; Chen-Fu Chu; Yu, C. C.; Yu, C.C.; Wang, Y. K.; Wang, Y.K.; Tsai, J. Y.; Tsai, J.Y.; Lai, F. I.; Lai, F.I.; Wang, S. C.; Wang, S.C.
November 2000
Applied Physics Letters;11/20/2000, Vol. 77 Issue 21
Academic Journal
In this letter, a low-resistance ohmic contact on p-type GaN using an alloy of Ni/Pd/Au is reported. The Mg doped p-type GaN samples were grown by metalorganic chemical vapor deposition with a carrier concentration of 4.1x10[sup 17] cm[sup -3]. The as-grown Mg doped samples were deposited with Ni (20 nm)/Pd (20 nm)/Au (100 nm) and then annealed in air, nitrogen, and oxygen ambient conditions at different annealing temperatures ranging from 350 to 650 °C. Linear I-V ohmic characteristics were observed with specific resistance as low as 1.0x10[sup -4] Ω cm[sup 2] for the samples annealed in oxygen atmosphere. Similar contact metal composition was also deposited on Be-implanted p-type GaN samples with a carrier density of 8.1x10[sup 19] cm[sup -3]. Without further annealing process, the samples show good ohmic contact with a lowest specific resistance of 4.5x10[sup -6] Ω cm[sup 2]. © 2000 American Institute of Physics.


Related Articles

  • Investigation of indium tin oxide/zinc oxide multilayer ohmic contacts to n-type GaN isotype conjunction. Lee, Ching-Ting; Yu, Qing-Xuan; Tang, Bang-Tai; Lee, Hsin-Ying; Hwang, Fu-Tsai // Applied Physics Letters;5/28/2001, Vol. 78 Issue 22, p3412 

    The ohmic performance of the ITO/ZnO multilayer deposited on n-type GaN layer was investigated. The best thermal annealing condition achieved for ohmic contact was 5 min at 500 °C, in hydrogen ambient. The measured specific contact resistance was 3x10[sup -4] Ω cm2. Ohmic formation...

  • Effects of sulfur passivation on Ti/Al ohmic contacts to n-type GaN using CH[sub 3]CSNH[sub 2] solution. Song, June O; Park, Seong-Ju; Seong, Tae-Yeon // Applied Physics Letters;4/29/2002, Vol. 80 Issue 17, p3129 

    We investigate the effect of CH[sub 3]CSNH[sub 2] solution treatment on Ti/Al ohmic contacts to n-GaN:Si (3×10[sup 18] cm[sup -3]). It is shown that the sulfide treatment results in a drastic increase in the photoluminescence intensity, compared with that of the untreated sample....

  • Low resistance Ti/Pt/Au ohmic contacts to p-type GaN. Zhou, L.; Lanford, W.; Ping, A. T.; Ping, A.T.; Adesida, I.; Yang, J. W.; Yang, J.W.; Khan, A. // Applied Physics Letters;6/5/2000, Vol. 76 Issue 23 

    Electrical properties of Ti (15 nm)/Pt (50 nm)/Au (80 nm) contacts on moderately doped p-GaN (N[sub A]=3.0x10[sup 17] cm[sup -3]) are reported. Linear current-voltage characteristics were observed after annealing the contacts for 1 min at temperatures above 700 °C. The best ohmic contacts...

  • Electronic transport mechanisms of nonalloyed Pt Ohmic contacts to p-GaN. Jang, Ja-Soon; Ja-Soon Jang; Seong, Tae-Yeon; Tae-Yeon Seong // Applied Physics Letters;5/8/2000, Vol. 76 Issue 19 

    We report on the electronic transport mechanisms for nonalloyed Pt Ohmic contacts to p-GaN which were surface treated using a buffered oxide etch solution and (NH[sub 4])[sub 2]S[sub x]. Measurements show that the value of the effective Richardson constant (A[sup **]) is 12 A cm-2 K-2, which is...

  • Low-resistance ohmic contacts to p-type GaN. Li, Y.-L.; Schubert, E. F.; Schubert, E.F.; Graff, J. W.; Graff, J.W.; Osinsky, A.; Schaff, W. F.; Schaff, W.F. // Applied Physics Letters;5/8/2000, Vol. 76 Issue 19 

    The specific contact resistance of two types of ohmic contacts to p-type GaN is analyzed. First, an ohmic contact formed by a metal electrode deposited on a highly doped p-type GaN layer. Second, an ohmic contact formed by a metal electrode deposited on a thin GaN layer with an internal electric...

  • Investigation of surface treatments for nonalloyed ohmic contact formation in Ti/Al contacts to n-type GaN. Lin, Yow-Jon; Yow-Jon Lin; Lee, Ching-Ting; Ching-Tee Lee // Applied Physics Letters;12/11/2000, Vol. 77 Issue 24 

    To investigate the possibility of preparing a nonalloyed ohmic contact to n-type GaN, the effects of GaN surface treatments on the metal/GaN interface were studied using x-ray photoelectron spectroscopy. A specific contact resistance of 5.0x10[sup -5] Ω cm[sup 2] for the Ti/Al nonalloyed...

  • Effect of alcohol-based sulfur treatment on Pt Ohmic contacts to p-type GaN. Huh, Chul; Kim, Sang-Woo; Kim, Hyun-Min; Kim, Dong-Joon; Park, Seong-Ju // Applied Physics Letters;3/26/2001, Vol. 78 Issue 13, p1942 

    The effects of an alcohol-based (NH[sub 4])[sub 2]S solution [t-C[sub 4]H[sub 9]OH+(NH[sub 4])[sub 2]S] treatment on Pt Ohmic contacts to p-type GaN are presented. The specific contact resistance decreased by three orders of magnitude from 2.56x10[sup -2] to 4.71x10[sup -5] Ω cm[sup 2] as a...

  • Room-temperature Ohmic contact on n-type GaN with surface treatment using Cl[sub 2] inductively coupled plasma. Jang, Ho Won; Jeon, Chang Min; Kim, Jong Kyu; Lee, Jong-Lam // Applied Physics Letters;4/2/2001, Vol. 78 Issue 14, p2015 

    A room-temperature Ti/Al Ohmic contact on n-type GaN was obtained by surface treatment using Cl[sub 2] inductively coupled plasma treatment. The specific contact resistivity was dramatically decreased from the Schottky behavior to 9.4x10[sup -6] Ω cm[sup 2] by the treatment. The binding...

  • Nonalloyed ohmic mechanism of TiN interfacial layer in Ti/Al contacts to (NH[sub 4])[sub 2]S[sub x]-treated n-type GaN layers. Lee, Ching-Ting; Lin, Yow-Jon; Lin, Chun-Hung // Journal of Applied Physics;10/1/2002, Vol. 92 Issue 7, p3825 

    We investigate the nonalloyed ohmic contact of Ti/Al contacts to (NH[sub 4])[sub 2]S[sub x]-treated n-type GaN layers using x-ray photoelectron spectroscopy analysis. The native oxide on the n-type GaN surface can be completely removed by (NH[sub 4])[sub 2]S[sub x] solution. The resultant Ga/N...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics