TITLE

Low-resistance ohmic contacts on p-type GaN using Ni/Pd/Au metallization

AUTHOR(S)
Chu, Chen-Fu; Chen-Fu Chu; Yu, C. C.; Yu, C.C.; Wang, Y. K.; Wang, Y.K.; Tsai, J. Y.; Tsai, J.Y.; Lai, F. I.; Lai, F.I.; Wang, S. C.; Wang, S.C.
PUB. DATE
November 2000
SOURCE
Applied Physics Letters;11/20/2000, Vol. 77 Issue 21
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
In this letter, a low-resistance ohmic contact on p-type GaN using an alloy of Ni/Pd/Au is reported. The Mg doped p-type GaN samples were grown by metalorganic chemical vapor deposition with a carrier concentration of 4.1x10[sup 17] cm[sup -3]. The as-grown Mg doped samples were deposited with Ni (20 nm)/Pd (20 nm)/Au (100 nm) and then annealed in air, nitrogen, and oxygen ambient conditions at different annealing temperatures ranging from 350 to 650 °C. Linear I-V ohmic characteristics were observed with specific resistance as low as 1.0x10[sup -4] Ω cm[sup 2] for the samples annealed in oxygen atmosphere. Similar contact metal composition was also deposited on Be-implanted p-type GaN samples with a carrier density of 8.1x10[sup 19] cm[sup -3]. Without further annealing process, the samples show good ohmic contact with a lowest specific resistance of 4.5x10[sup -6] Ω cm[sup 2]. © 2000 American Institute of Physics.
ACCESSION #
4414432

 

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