Charge storage and interface states effects in Si-nanocrystal memory obtained using low-energy Si[sup +] implantation and annealing

Kapetanakis, E.; Normand, P.; Tsoukalas, D.; Beltsios, K.; Stoemenos, J.; Zhang, S.; van den Berg, J.
November 2000
Applied Physics Letters;11/20/2000, Vol. 77 Issue 21
Academic Journal
Thin SiO[sub 2] oxides implanted by very-low-energy (1 keV) Si ions and subsequently annealed are explored with regards to their potential as active elements of memory devices. Charge storage effects as a function of Si fluence are investigated through capacitance and channel current measurements. Capacitance-voltage and source-drain current versus gate voltage characteristics of devices implanted with a dose of 1x10[sup 16] cm[sup -2] or lower exhibit clear hysteresis characteristics at low electric field. The observed fluence dependence of the device electrical properties is interpreted in terms of the implanted oxide structure. © 2000 American Institute of Physics.


Related Articles

  • Correlation between structural and optical properties of Si nanocrystals embedded in SiO[sub 2]: The mechanism of visible light emission. Garrido, B.; López, M.; González, O.; Pérez-Rodríguez, A.; Morante, J. R.; Bonafos, C. // Applied Physics Letters;11/13/2000, Vol. 77 Issue 20 

    The size distribution, band gap energy, and photoluminescence of silicon nanocrystals embedded in SiO[sub 2] have been measured by direct and independent methods. The size distribution is measured by coupling high-resolution and conventional electron microscopy in special imaging conditions. The...

  • The Influence of Irradiation and Subsequent Annealing on Si Nanocrystals Formed in SiO[sub 2] Layers. Kachurin, G. A.; Yanovskaya, S. G.; Ruault, M.-O.; Gutakovskii, A. K.; Zhuravlev, K. S.; Kaitasov, O.; Bernas, H. // Semiconductors;Aug2000, Vol. 34 Issue 8, p965 

    Luminescent Si nanocrystals formed in SiO[sub 2] layers were irradiated with electrons and He[sup +] ions with energies of 400 and 25-130 keV, respectively. The effects of irradiation and subsequent annealing at 600-1000�C were studied by the methods of photoluminescence and electron...

  • Size dependence of lifetime and absorption cross section of Si nanocrystals embedded in SiO[sub 2]. Garcia, C.; Garrido, B.; Pellegrino, P.; Ferre, R.; Moreno, J. A.; Morante, J. R.; Pavesi, L.; Cazzanelli, M. // Applied Physics Letters;3/10/2003, Vol. 82 Issue 10, p1595 

    Photoluminescence lifetimes and optical absorption cross sections of Si nanocrystals embedded in SiO[sub 2] have been studied as a function of their average size and emission energy. The lifetimes span from 20 µs for the smallest sizes (2.5 nm) to more than 200 µs for the largest ones (7...

  • Formation of a single interface-near, δ-like Ge nanocluster band in thin SiO[sub 2] films using ion-beam synthesis. Klimenkov, M.; von Borany, J.; Matz, W.; Gro¨tzschel, R.; Herrmann, F. // Journal of Applied Physics;6/15/2002, Vol. 91 Issue 12, p10062 

    The possibility to create a δ-like, interface-near Ge nanocluster band in a 20 nm thin SiO[sub 2] layer by ion-beam synthesis is demonstrated. The role of the post-implantation annealing conditions for the formation of Ge nanoclusters in the center of the layer, near the interface, or in both...

  • Rapid synthesis and consolidation of nanostructured MgSiO-MgSiO composites by high frequency induction heated sintering. Shon, In-Jin; Ko, In-Yong; Jun, Hui-Soo; Hong, Kyung-Tae; Doh, Jung-Mann; Yoon, Jin-Kook // Research on Chemical Intermediates;Nov2011, Vol. 37 Issue 8, p821 

    Rapid synthesis and sintering of nanostructured MgSiO-MgSiO composites was investigated via a high-frequency induction heating sintering process. The advantage of this process is that it enables very quick densification to near theoretical density and prohibition of grain growth in...

  • Large-scale Synthesis of β-SiC Nanochains and Their Raman/Photoluminescence Properties. Meng, Alan; Zhang, Meng; Gao, Weidong; Sun, Shibin; Li, Zhenjiang // Nanoscale Research Letters;Jan2011, Vol. 6 Issue 1, p1 

    lthough the SiC/SiO nanochain heterojunction has been synthesized, the chained homogeneous nanostructure of SiC has not been reported before. Herein, the novel β-SiC nanochains are synthesized assisted by the AAO template. The characterized results demonstrate that the nanostructures are...

  • Quantitative metrology study of Cu/SiO[sub 2] interconnect structures using fluorescence x-ray microscopy. Xu, Guangyong; Su, X.; Stagarescu, C. B.; Eastman, D. E.; Lai, B.; Cai, Z.; Noyan, I. C.; Hu, C.-K. // Applied Physics Letters;2/5/2001, Vol. 78 Issue 6, p820 

    We demonstrate the capability of fluorescence x-ray microscopy with a 0.25 μm beam for in situ measurements of Cu-wiring interconnects of submicron dimensions. We are able to measure submicron line widths, lengths, and thicknesses of both Cu and W structures, and a Ta liner in the test...

  • Patterned growth of single-walled carbon nanotubes on full 4-inch wafers. Franklin, Nathan R.; Li, Yiming; Chen, Robert J.; Javey, Ali; Dai, Hongjie // Applied Physics Letters;12/31/2001, Vol. 79 Issue 27, p4571 

    Patterned growth of single-walled carbon nanotubes (SWNTs) is achieved on full 4-in. SiO[sub 2]/Si wafers. Catalytic islands with high uniformity over the entire wafer are obtained by a deep ultraviolet photolithography technique. Growth by chemical vapor deposition of methane is found to be...

  • Structural and morphological control of nanosized Cu islands on SiO[sub 2] using a Ti underlayer. Minghui Hu, S.; Suguru Noda, S.; Tatsuya Okubo; Yukio Yamaguchi; Hiroshi Komiyama, S. // Journal of Applied Physics;9/1/2003, Vol. 94 Issue 5, p3492 

    The structure and morphology of nanosized Cu islands grown by sputter deposition on clean SiO[sub 2] substrates and Ti-underlayered SiO[sub 2] substrates are investigated using transmission electron microscopy. On SiO[sub 2], spherical Cu islands with a random crystalline orientation are formed,...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics