Quantitative nanoscale metrology study of Cu/SiO[sub 2] interconnect technology using transmission x-ray microscopy

Su, X.; Stagarescu, C.; Xu, G.; Eastman, D. E.; Eastman, D.E.; McNulty, I.; Frigo, S. P.; Frigo, S.P.; Wang, Yuxin; Yuxin Wang; Retsch, Cornelia C.; Noyan, I. C.; Noyan, I.C.; Hu, C.-K.
November 2000
Applied Physics Letters;11/20/2000, Vol. 77 Issue 21
Academic Journal
This letter describes quantitative nondestructive measurements of multilayer submicron Cu/SiO[sub 2] interconnect structures such as Cu lines, vias, and W lines with lateral dimensions down to 300 nm and electromigration defect structures using scanning transmission x-ray microscopy employing a 0.2 μm x-ray beam. Typical measurement accuracies are ≤60 nm for widths and lengths and ≤10% in height. The high-resolution and nondestructive nature of this technique provide a very powerful probe of physical properties of nanoscale and submicron materials and structures. © 2000 American Institute of Physics.


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