Thin-film-induced index change and channel waveguiding in epitaxial GaN films

Kim, Euisong; Euisong Kim; Lee, Byounghee; Byounghee Lee; Nahhas, Ahmed; Kim, Hong Koo; Hong Koo Kim
September 2000
Applied Physics Letters;9/18/2000, Vol. 77 Issue 12
Academic Journal
We report on optical waveguiding in the channel region of an epitaxial GaN film defined by a SiN cladding layer of a stripe window pattern. We carried out numerical analyses on the various possible effects that might contribute to the overcompensation of the negative loading effect of a SiN cladding window. This includes the photoelastic, piezoelectric, and electro-optic effects in GaN induced by a SiN window layer. The analysis result suggests that the observed phenomenon can be ascribed to a combination of both the photoelastic and electro-optic effects, and especially that the spontaneous polarization field in undoped GaN with a low background carrier concentration might play an important role in forming a channel waveguide in the window region. © 2000 American Institute of Physics.


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