TITLE

High-brightness organic double-quantum-well electroluminescent devices

AUTHOR(S)
Huang, Jingsong; Jingson Huang; Yang, Kaixia; Kaixia Yang; Liu, Shiyong; Shiyong Liu; Jiang, Hongjin
PUB. DATE
September 2000
SOURCE
Applied Physics Letters;9/18/2000, Vol. 77 Issue 12
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
An organic double-quantum-well structure electroluminescent device fabricated by a doping method is demonstrated. The device consists of N,N[sup ′]-bis-(1-naphthl)-N,N[sup ′]-diphenyl-1,1[sup ′]-biphenyl-4,4[sup ′]-diamine (NPB) used as a hole transporter, undoped tris(8-quinolinolato) aluminum (Alq) as a barrier potential or electron transporter, and Alq doped with 5,6,11,12-tetraphenylnaphthacene (rubrene) as a potential well and emitter, and has the following structure: indium tin oxide/NPB/Alq:rubrene/Alq/Alq:rubrene/Alq/Mg/Al. The maximum brightness and efficiency reach 48 000 cd/m2 and 4.59 lm/W, respectively. The present double-quantum-well structure device shows higher brightness and higher efficiency than those of the common heterostructure devices. © 2000 American Institute of Physics.
ACCESSION #
4414311

 

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