Scanning reflection electron microscopy study of surface defects in GaN films formed by epitaxial lateral overgrowth

Watanabe, Heiji; Kuroda, Naotaka; Sunakawa, Haruo; Usui, Akira
September 2000
Applied Physics Letters;9/18/2000, Vol. 77 Issue 12
Academic Journal
We have used scanning reflection electron microscopy (SREM) to detect surface defects in GaN films formed by facet-initiated epitaxial lateral overgrowth. SREM revealed individual threading dislocations and single atomic steps on the GaN surface, and provided images of crystallographic tilting near the surfaces. We found that one of the two tilted GaN crystals in the overgrown areas became dominant and that the surface changed to a single domain after 50-μm-thick GaN deposition. Our SREM results also showed that the deposition of thick (over 100 μm) GaN films significantly improves the crystallographic structures of the overgrown regions, and reduces the threading dislocations in the GaN films. © 2000 American Institute of Physics.


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