Plasma-induced damage to n-type GaN

Choi, H. W.; Choi, H.W.; Chua, S. J.; Chua, S.J.; Raman, A.; Pan, J. S.; Pan, J.S.; Wee, A. T. S.; Wee, A.T.S.
September 2000
Applied Physics Letters;9/18/2000, Vol. 77 Issue 12
Academic Journal
The effects of plasma etching on 1/f noise and photoluminescence (PL) characteristics of n-GaN have been investigated. A reduction of 1/f noise was observed after plasma exposure, a result of enhanced passivation of the reactive surface. This is attributed to the removal of carbon and the creation of a Ga-rich surface by the etching process. Nevertheless, the formation of nonradiative recombination centers impaired the PL intensity. Reconstruction of a stoichiometric surface was achieved by annealing. This induced the incorporation of carbon into GaN, deteriorating the PL performance further, but it could be restored by a chemical treatment of 10:1 HF:H[sub 2]O. © 2000 American Institute of Physics.


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