Uniaxial locked epitaxy of ZnO on the a face of sapphire

Fons, P.; Iwata, K.; Yamada, A.; Matsubara, K.; Niki, S.; Nakahara, K.; Tanabe, T.; Takasu, H.
September 2000
Applied Physics Letters;9/18/2000, Vol. 77 Issue 12
Academic Journal
High-quality, c-oriented ZnO epitaxial films have been grown on the a surface using molecular-beam epitaxy. The use of a-oriented sapphire eliminates rotational domains and related structural defects which have limited the use of ZnO in electronic applications. The ZnO epitaxial layers are uniquely oriented with the ZnO/sapphire orientational relationship [0001]|[112¯0] and <112¯0>|[0001]. This unique orientation is a consequence of the anisotropy of the a-sapphire surface in conjunction with a strong correlation along a single direction leading to the term uniaxial locked epitaxy. High-resolution x-ray diffraction measurements show an increase in x-ray lateral coherence length from several tens of nanometers to >0.7 μm for growth of c-oriented ZnO on the a surface as opposed to the c surface of sapphire. © 2000 American Institute of Physics.


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