Two-step growth of high-quality GaN by hydride vapor-phase epitaxy

Tavernier, P. R.; Tavernier, P.R.; Etzkorn, E. V.; Etzkorn, E.V.; Wang, Y.; Clarke, D. R.; Clarke, D.R.
September 2000
Applied Physics Letters;9/18/2000, Vol. 77 Issue 12
Academic Journal
The use of a low-temperature layer of GaN formed by hydride vapor-phase epitaxy (HVPE) as a template to grow high-quality HVPE films is demonstrated. Using layers formed by reacting GaCl and NH[sub 3] at 550 °C and annealed at a growth temperature of 1050 °C, thick films of GaN can be grown by HVPE with fewer than 10[sup 8] dislocations per cm[sup 2]. Dislocation densities measured by high-resolution x-ray diffraction, atomic-force microscopy step termination density and plan-view transmission electron miscroscopy reveal that ∼23 μm films have dislocation densities of ∼6x10[sup 7] cm[sup -2]. Obtaining high-quality single-crystal character films was found to be dependent on several factors, most importantly, the rate of temperature increase to growth temperature and the layer thickness. © 2000 American Institute of Physics.


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