TITLE

Electroluminescence of Ge/Si self-assembled quantum dots grown by chemical vapor deposition

AUTHOR(S)
Brunhes, T.; Boucaud, P.; Sauvage, S.; Aniel, F.; Lourtioz, J.-M.; Hernandez, C.; Campidelli, Y.; Kermarrec, O.; Bensahel, D.; Faini, G.; Sagnes, I.
PUB. DATE
September 2000
SOURCE
Applied Physics Letters;9/18/2000, Vol. 77 Issue 12
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We have fabricated light-emitting diodes on Si operating in the near-infrared. The active region of the p-i-n diodes consists of Ge/Si self-assembled quantum dots. The Ge islands were grown in an industrial 200 mm single-wafer chemical vapor deposition reactor. The photoluminescence and the electroluminescence of the islands are resonant in the spectral range around 1.4-1.5 μm wavelength. The electroluminescence is observed up to room temperature. © 2000 American Institute of Physics.
ACCESSION #
4414287

 

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