Distinguishing between interface dipoles and band bending at metal/tris-(8-hydroxyquinoline) aluminum interfaces

Hill, I. G.; Ma¨kinen, A. J.; Kafafi, Z. H.
September 2000
Applied Physics Letters;9/18/2000, Vol. 77 Issue 12
Academic Journal
Using a combination of photoelectron spectroscopies and ellipsometry to study the thin-film growth of Alq[sub 3] (tris-(8-hydroxyquinoline) aluminum) on Ag, we have been able to distinguish between molecular orbital energy shifts due to "band bending" and interface dipole formation. We have observed large binding energy shifts (approx. 0.5 eV) of the organic molecular levels at low coverages. We conclude that these shifts are consistent with the formation of a polarized molecular layer, or interface dipole, and are inconsistent with an electrostatic band-bending model. © 2000 American Institute of Physics.


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