Contribution of ions and radicals in etching of Si[sub 1-x]Ge[sub x] epitaxial films using an electron-cyclotron-resonance chlorine plasma

Takeuchi, Hajime; Matsuura, Takashi; Murota, Junichi
September 2000
Applied Physics Letters;9/18/2000, Vol. 77 Issue 12
Academic Journal
Etching of undoped Si[sub 1-x]Ge[sub x] epitaxial films (x=0-1) has been investigated using an electron-cyclotron-resonance chlorine plasma. It is found that the etch rate of Si[sub 1-x]Ge[sub x] increases with increasing Ge fraction and decreases with increasing Cl[sub 2] pressure. From the comparison of the etch rate with the number of the incident ions toward the wafer and the relative radical density in the plasma, it is also found that the etching of Si[sub 1-x]Ge[sub x] with low x is induced mainly by chlorine ions, and for high x, the contribution of radicals to the etching becomes larger. From the angular resolved x-ray photoelectron spectroscopy analysis, it is found that the etching by chlorine radicals causes surface segregation of Si with the concentration of about 1-1.5x10[sup 14] cm[sup -2] on the etched Si[sub 1-x]Ge[sub x] surface. © 2000 American Institute of Physics.


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