TITLE

Amorphic diamond/silicon semiconductor heterojunctions exhibiting photoconductive characteristics

AUTHOR(S)
Davanloo, F.; Collins, C. B.; Koivusaari, K. J.; Leppa¨vuori, S.
PUB. DATE
September 2000
SOURCE
Applied Physics Letters;9/18/2000, Vol. 77 Issue 12
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Amorphic diamond deposited from an intense laser plasma of C[sup 3+] and C[sup 4+] exhibits semiconductor properties. Although this material has a measured electrical breakdown strength of 3x10[sup 9] V/m, it is shown to form a heterojunction with both p- and n-type Si. Regardless of the doping type and its concentration in the Si, current is rectified in the same direction with the diamond layer acting as the cathode. A photoconductive effect is observed for these junction devices and current levels from the heterojunction vary with the amount of reverse bias and the illumination. The spectral response is estimated to mostly lie in the range of 600-900 nm. © 2000 American Institute of Physics.
ACCESSION #
4414282

 

Related Articles

  • Observation of negative persistent photoconductivity in an n-channel GaAs/Al[sub x]Ga[sub 1-x]As.... Chen, J.; Yang, C.H. // Applied Physics Letters;4/27/1992, Vol. 60 Issue 17, p2113 

    Examines the negative persistent photoconductivity in an n-channel gallium arsenide/Al[sub x]Ga[sub 1-x]As single heterojunction. Magnitude of electron mobility; Factors attributed to the negative persistent photoconductivity effect; Discussion of the nonexponential recovery time.

  • Low-frequency noise in GaN/GaAlN heterojunctions. Levinshtein, M. E.; Pascal, F.; Contreras, S.; Knap, W.; Rumyantsev, S. L.; Gaska, R.; Yang, J. W.; Shur, M. S. // Applied Physics Letters;6/8/1998, Vol. 72 Issue 23, p3053 

    We report on the results of the measurements of the low-frequency nitride/gallium aluminum nitride (GaN/GaAlN) heterojunctions grown on sapphire substrates. The noise spectra have the form of the 1/f noise with the Hooge parameter of approximately 10[sup -2]. The effects of band-to-band and...

  • Photosensitivity of Photocells Based on ZnO/CdS/Cu(In, Ga)Se2 Heterostructures and Exposed to γ-ray Radiation. Emtsev, V. V.; Nikolaev, Yu. A.; Poloskin, D. S.; Rud', V. Yu.; Rud', Yu. V.; Terukov, E. I.; Yakushev, M. V. // Semiconductors;Dec2005, Vol. 39 Issue 12, p1406 

    The effect of irradiation with γ-ray photons (Co60) on photoconversion in the thin-film ZnO/CdS/Cu(In, Ga)Se2 heterostructure photocells exposed to natural and linearly polarized light is studied. It is shown that irradiation of the structures with penetrating γ-ray photons at room...

  • Electronic states on silicon surface after deposition and annealing of SiO films. Vlasenko, N.; Oleksenko, P.; Denisova, Z.; Sopinskii, N.; Veligura, L.; Gule, E.; Litvin, O.; Mukhlyo, M. // Semiconductors;May2011, Vol. 45 Issue 5, p587 

    The spectrum of the photoconductivity induced by the polarization field of charges at surface states and traps in the film bulk has been analyzed to determine the energy band diagram at the c-Si-SiO interface and the changes in the electronic states after the film annealing. It is found that the...

  • Reproducible growth of p-type ZnO:N using a modified atomic layer deposition process combined with dark annealing. Dunlop, L.; Kursumovic, A.; MacManus-Driscoll, J. L. // Applied Physics Letters;10/27/2008, Vol. 93 Issue 17, p172111 

    Nitrogen doped ZnO (ZnO:N) films were deposited by atmospheric atomic layer deposition (ALD) between 100 and 300 °C. Postannealing was required to remove compensating defects. After a low temperature dark annealing, originally n-type films became p-type. Films deposited at low temperatures...

  • Wannier-Stark ladder conditions in 4H-SiC p-n junctions grown on off axis substrates. Sankin, V. I.; Shkrebiy, P. P.; Yakimova, R. // Applied Physics Letters;12/4/2006, Vol. 89 Issue 23, p233508 

    4H-SiC p+-n--n+ junctions have been prepared on 8° off oriented plane aiming to investigate conditions of Wannier-Stark localization (WSL), and respectively the occurrence of a negative temperature coefficient of avalanche breakdown voltage (TCABV). A method is proposed that can enable...

  • CdS enhances Voc and fill factor in CdS/CdTe and CdS/CuInSe2 solar cells. Böer, Karl W. // Journal of Applied Physics;Jan2010, Vol. 107 Issue 2, p023701 

    A cover layer of CdS enhances the efficiency of CdTe and CuInSe2 based solar cells. The experimental results are summarized, giving the reasons why a CdS layer causes Voc and the fill factor to increase. Field quenching by Frenkel–Poole excitation in copper doped CdS leads to a negative...

  • Connector firms see growth, price pressure. B.L. // Electronic News;1/3/94, Vol. 40 Issue 1995, p40 

    Reports on semiconductor manufacturers' predictions of good industry performance in 1994 despite price struggles. Benefits derived from North American Free Trade Agreement (NAFTA); Weak economic conditions in Europe and Japan; Stabilization in semiconductor prices; Comments by industry executives.

  • Direct imaging of the depletion region of an InP p–n junction under bias using scanning voltage microscopy. Ban, D.; Sargent, E. H.; Dixon-Warren, St. J.; Calder, I.; SpringThorpe, A. J.; Dworschak, R.; Este, G.; White, J. K. // Applied Physics Letters;12/23/2002, Vol. 81 Issue 26, p5057 

    We directly image an InP p-n junction depletion region under both forward and reverse bias using scanning voltage microscopy (SVM), a scanning probe microscopy (SPM) technique. The SVM results are compared to those obtained with scanning spreading resistance microscopy (SSRM) measurements under...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics