Electric-field dependence of mobile proton-induced switching in protonated gate oxide field-effect transistors

Devine, R. A. B.; Devine, R.A.B.; Huiberts, J.N.
September 2000
Applied Physics Letters;9/18/2000, Vol. 77 Issue 12
Academic Journal
The switching characteristics of protonated gate oxide field-effect transistors for use as integrated memory element devices have been studied. The rate of switching of the source drain current in devices having 20 and 40 nm gate oxide thicknesses which contain mobile protons is found to vary exponentially with the electric field applied across the oxide. The time t[sub 1/2] at which the current attains half the maximum value is found to vary as the oxide thickness to the power &sqrt;3→2. Extrapolation to the case of devices with 4 nm thick gate oxide for fields ∼4 MV cm-1 indicates 3.2≤t[sub 1/2]≤6.5 ms time scales should be attainable. © 2000 American Institute of Physics.


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