GaN homoepitaxy by metalorganic chemical-vapor deposition on free-standing GaN substrates

Miskys, C. R.; Kelly, M. K.; Ambacher, O.; Martínez-Criado, G.; Stutzmann, M.
September 2000
Applied Physics Letters;9/18/2000, Vol. 77 Issue 12
Academic Journal
Lattice-matched GaN layers are grown by metalorganic chemical-vapor deposition on free-standing GaN substrates, which were fabricated by laser-induced liftoff of 300-μm-thick films grown by hydride vapor-phase epitaxy. Pretreatment of the free-standing films before the homoepitaxial growth of GaN involved mechanical polishing of the Ga-face surface and a final Cl-based plasma etch. By a combination of high-resolution x-ray diffraction, atomic-force microscopy, as well as Raman and photoluminescence spectroscopy, the structural and optical properties of the lattice-matched GaN layers are characterized. X-ray diffraction patterns of (0002), (0004), and (0006) reflexes with a full width at half maximum (FWHM) of as low as 20 arcsec are obtained. The dislocation density is determined to be 2x10[sup 7] cm[sup -2] and the surface morphology is dominated by bilayer steps with terraces of about 200 nm. The lattice mismatch between the GaN substrate and the homoepitaxial layer is below 3x10[sup -5], resulting in a very narrow FWHM of the excitonic luminescence of 0.5 meV. © 2000 American Institute of Physics.


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