Coherent population transfer in coupled semiconductor quantum dots

Hohenester, Ulrich; Troiani, Filippo; Molinari, Elisa; Panzarini, Giovanna; Macchiavello, Chiara
September 2000
Applied Physics Letters;9/18/2000, Vol. 77 Issue 12
Academic Journal
We propose a solid-state implementation of stimulated Raman adiabatic passage in two coupled semiconductor quantum dots. Proper combination of two pulsed laser fields allows the coherent carrier transfer between the two nanostructures without suffering significant losses due to environment coupling. By use of a general solution scheme for the carrier states in the double-dot structure, we identify the pertinent dot and laser parameters. © 2000 American Institute of Physics.


Related Articles

  • Nanomachine Dreams: Turning Science Fiction Into Fact. Ben-Ari, Elia T. // JNCI: Journal of the National Cancer Institute;4/2/2003, Vol. 95 Issue 7, p503 

    Focuses on the development of quantum dots and other nanomaterials as components of 'smart nanostructures,' or nanomachines that can circulate through the body. Detection of cancer-associated molecular diseases; Delivery of a drug to the disease site; Monitor of the progress of therapy.

  • Lines of interacting quantum-dot cells: A binary wire. Lent, Craig S.; Tougaw, P. Douglas // Journal of Applied Physics;11/15/1993, Vol. 74 Issue 10, p6227 

    Presents a study which examined the behavior of linear arrays of cells composed of quantum dots. Connection between quantum devices and locally interconnected architectures; Schematic representation of the quantum-dot cell; Calculation of the cell-cell response function; Details on the Hartree...

  • Electronic properties of mechanically induced kinks in single-walled carbon nanotubes. Bozovic, Dolores; Bockrath, M.; Hafner, Jason H.; Lieber, Charles M.; Park, Hongkun; Tinkham, M. // Applied Physics Letters;6/4/2001, Vol. 78 Issue 23, p3693 

    We have used an atomic-force microscope tip to mechanically buckle single-walled carbon nanotubes. The resistance of the induced defects ranged from 10 to 100 kΩ and varied with the local Fermi level, as determined by scanned-gate microscopy. By forming two closely spaced defects on metallic...

  • A special issue on nanotoxicology. Weiss, C.; Diabaté, S. // Archives of Toxicology;Jul2011, Vol. 85 Issue 7, p705 

    An introduction is presented in which the editors discuss various reports within the issue on topics including the toxicity of quantum dots (QDs), the dosimetry of nanomaterials, and nanotoxicology.

  • Tamm states and quantum dots in carbon and heteroatomic nanotubes. Stankevich, I. V.; Chernozatonskiı, L. A. // Physics of the Solid State;Aug99, Vol. 41 Issue 8, p1386 

    The electronic structure of C-BN nanotubes is discussed in the π approximation. Two types of such structures with (n,0)-tubulet topology are investigated: 1) semi-infinite C-BN and C nanotubes and 2) C-BN nanotubes, consisting of two semi-infinite BN nanotubes coupled by a ring-shaped carbon...

  • Coulomb-blockade spectroscopy on a small quantum dot in a parallel magnetic field. Duncan, D. S.; Duncan, D.S.; Goldhaber-Gordon, D.; Westervelt, R. M.; Westervelt, R.M.; Maranowski, K. D.; Maranowski, K.D.; Gossard, A. C.; Gossard, A.C. // Applied Physics Letters;10/2/2000, Vol. 77 Issue 14 

    Coulomb-blockade spectroscopy measurements are made on a small GaAs/AlGaAs quantum dot in a magnetic field oriented parallel to the plane of the sample. Coulomb-blockade peak motion is observed which can be explained by changes in the spin of successive ground states as single electrons are...

  • Quantum dot and hole formation in sputter erosion. Kahng, B.; Jeong, H.; Barabási, A.-L. // Applied Physics Letters;2/5/2001, Vol. 78 Issue 6, p805 

    Recently, it was experimentally demonstrated that sputtering under normal incidence leads to the formation of spatially ordered uniform nanoscale islands or holes. Here, we show that these nanostructures have inherently nonlinear origin, first appearing when the nonlinear terms start to dominate...

  • Influence of Heat on Impurity States in an Artificial Semiconductor Atom. Elabsy, A.M. // Egyptian Journal of Solids;2000, Vol. 23 Issue 2, p267 

    The present work investigates the influence of theat on the donor impurity states in a man-made artificial semiconductor atom (ASA) based on a nano-meter scale, the so-called quantum dot (QD). An on-center donor impurity is considered. The investigated nanostructure is composed of GaAs...

  • Size distribution in quantum-dot heterostructures. Yarema, S. V.; Vengrenovich, R. D. // Russian Physics Journal;Apr2006, Vol. 49 Issue 4, p411 

    The size distribution functions for nanoclusters in quantum-dot heterostructures are calculated within the LSW theory. The most common numerical characteristics are calculated for these distributions. The corresponding size distribution functions are selected by means of comparison of the...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics