Transport and optical modeling of organic light-emitting diodes

Tessler, N.
September 2000
Applied Physics Letters;9/18/2000, Vol. 77 Issue 12
Academic Journal
We present detailed theoretical modeling of organic light-emitting diodes. We incorporate both optical and electrical modeling into one and thus achieve a more comprehensive picture of the device operation. The importance of including the exciton generation and emission rate in a transport model is highlighted and we find that in such devices the charge recombination zone is not necessarily identical to the exciton emission zone. Moreover, both the electrical and optical structure affect the exciton density distribution and thus also the externally measured light. © 2000 American Institute of Physics.


Related Articles

  • Magnetic field dependent triplet-triplet annihilation in Alq3-based organic light emitting diodes at different temperatures. Liu, R.; Zhang, Y.; Lei, Y. L.; Chen, P.; Xiong, Z. H. // Journal of Applied Physics;May2009, Vol. 105 Issue 9, p093719 

    The magnetic field dependent current and electroluminescence (EL) of aluminum tris-(8-hydroxyquinoline) (Alq3)-based organic light emitting diodes (OLEDs) have been measured at different temperatures. At low temperatures, the magnetic field effects consist of a rapid rising in EL in low field...

  • Luminescences from localized states in InGaN epilayers. Chichibu, S.; Azuhata, T. // Applied Physics Letters;5/26/1997, Vol. 70 Issue 21, p2822 

    Measures the optical spectra of InGaN alloys using light-emitting diode devices. Assignment of undoped emission to the exciton recombination; Contribution of localized excitons in the emission process; Impact of free electron penetration on the band gap red shift.

  • Investigation of the emission mechanism in InGaN/GaN-based light-emitting diodes. Wang, T.; Bai, J.; Sakai, S.; Ho, J. K. // Applied Physics Letters;4/30/2001, Vol. 78 Issue 18, p2617 

    The exciton-localization effect and quantum-confine Stark effect (QCSE) on the performance of InGaN/GaN-based light-emitting diodes (LEDs) have been investigated with regard to indium mole fraction and well thickness by means of temperature-dependent and excitation-power-dependent...

  • Room-temperature sharp line electroluminescence at lambda=1.54 mum from an erbium-doped, silicon.... Zheng, B.; Michel, J. // Applied Physics Letters;5/23/1994, Vol. 64 Issue 21, p2842 

    Examines the electroluminescence spectra of erbium-doped silicon light-emitting diode (LED). Details of the wavelength and linewidth of LED; Correlation between light intensity and temperature; Occurrence of free exciton and defect-related luminescence bands.

  • Spontaneous emission of localized excitons in InGaN single and multiquantum well structures. Chichibu, S.; Azuhata, T.; Sota, T.; Nakamura, S. // Applied Physics Letters;12/30/1996, Vol. 69 Issue 27, p4188 

    Emission mechanisms of InGaN single quantum well blue and green light emitting diodes and multiquantum well structures were investigated by means of modulation spectroscopy. Their static electroluminescence (EL) peak was assigned to the recombination of excitons localized at certain potential...

  • Effect of thickness variation in high-efficiency InGaN/GaN light-emitting diodes. Narayan, J.; Wang, H.; Ye, Jinlin; Hon, Schang-Jing; Fox, Kenneth; Chen, Jyh Chia; Choi, H. K.; Fan, John C. C. // Applied Physics Letters;7/29/2002, Vol. 81 Issue 5, p841 

    In[sub x]Ga[sub (1-x)]N/GaN multiquantum-well light-emitting diodes (LEDs) having periodic thickness variations (TVs) in In[sub x]Ga[sub (1-x)]N active layers exhibit substantially higher optical efficiency than LEDs with uniform In[sub x]Ga(1-x)N layers. In these nanostructured LEDs, the...

  • Triplet exciton confinement in phosphorescent polymer light-emitting diodes. Chen, Fang-Chung; He, Gufeng; Yang, Yang // Applied Physics Letters;2/17/2003, Vol. 82 Issue 7, p1006 

    A series of iridium complexes, with triplet energy levels above or below the triplet level of host polymer, were used to study the flow of excitons between the host and the dopants. The performance of phosphorescent polymer light-emitting diodes has been shown to be sensitive to the triplet...

  • Bound-exciton-induced current bistability in a silicon light-emitting diode. Sun, J. M.; Dekorsy, T.; Skorupa, W.; Schmidt, B.; Helm, M. // Applied Physics Letters;4/28/2003, Vol. 82 Issue 17, p2823 

    A bound-exciton-induced current bistability is observed under forward bias in an efficient silicon light-emitting diode at low temperatures. Two stable states of the S-type differential conductivity correspond to empty and filled states of bound excitons, respectively. The relationship between...

  • Localized quantum well excitons in InGaN single-quantum-well amber light-emitting diodes. Chichibu, S. F.; Azuhata, T.; Sota, T.; Mukai, T.; Nakamura, S. // Journal of Applied Physics;11/1/2000, Vol. 88 Issue 9, p5153 

    Investigates optical properties of single quantum-well amber light-emitting-diodes to verify the importance of localized quantum well excitons in their spontaneous emission mechanisms. Internal piezoelectric field; Transmittance and photovoltaic spectra; Thermal distribution of localized...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics