TITLE

Influence of the heterojunction on the field emission from tetrahedral amorphous carbon on Si

AUTHOR(S)
Rupesinghe, N. L.; Rupesinghe, N.L.; Chhowalla, M.; Amaratunga, G. A. J.; Amaratunga, G.A.J.; Weightman, P.; Martin, D.; Unsworth, P.; Murray, J.
PUB. DATE
September 2000
SOURCE
Applied Physics Letters;9/18/2000, Vol. 77 Issue 12
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
In order to study the influence of the back barrier on the electron emission properties of tetrahedral amorphous carbon (ta-C), we have deposited identical films on p and n+ Si. The valence and conduction band offsets were measured for ta-C on p and n+ Si using in situ x-ray photoelectron spectroscopy and optical spectroscopy. From the band measurements it is shown that there is a substantial back barrier to emission. We show that for films having very similar properties, the electron emission can be influenced by the ta-C/Si heterojunction. © 2000 American Institute of Physics.
ACCESSION #
4414256

 

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