TITLE

In-plane anisotropic lasing characteristics of (110)-oriented GaInAsP quantum-well lasers

AUTHOR(S)
Oe, Kunishige; Bhat, Raj; Ueki, Mineo
PUB. DATE
December 2000
SOURCE
Applied Physics Letters;12/18/2000, Vol. 77 Issue 25
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
(110)-oriented GaInAsP quantum-well (QW) lasers have been fabricated to investigate growth direction effects of the QW structure on laser performance. Large in-plane anisotropic threshold current densities in the lasers were observed between the [001] and [11¯0] cavity directions of the (110)-oriented QW structure lasers. This large anisotropy is able to be ascribed to a stronger oscillator strength for [11¯0]-polarized light. Fairly low threshold current densities of less than 0.6 kA/cm2 were obtained for the lasers with cavities along [001] direction in spite of the lower reflectivity of the reactive ion etching etched mirror surface. © 2000 American Institute of Physics.
ACCESSION #
4414254

 

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