TITLE

Magnetic-field-enhanced generation of terahertz radiation in semiconductor surfaces

AUTHOR(S)
Weiss, C.; Wallenstein, R.; Beigang, R.
PUB. DATE
December 2000
SOURCE
Applied Physics Letters;12/18/2000, Vol. 77 Issue 25
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
A comparative study of magnetic-field-enhanced THz generation in semiconductor surfaces of InSb, InAs, InP, GaAs, and GaSb is reported. Applying an external magnetic field, the power of the generated THz radiation is increased for all examined semiconductor materials. The use of time-resolved measurements of the THz waveform allows to distinguish between the fraction of radiation originating from the surface depletion field and the fraction that is additionally generated by the magnetic field. It turns out that the power enhancement factor due to the magnetic field is inversely proportional to the effective electron mass. © 2000 American Institute of Physics.
ACCESSION #
4414227

 

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