Evidence for an isotope effect in the electrical transport of thermally generated mobile charges in amorphous SiO[sub 2]

Devine, R. A. B.; Devine, R.A.B.
December 2000
Applied Physics Letters;12/18/2000, Vol. 77 Issue 25
Academic Journal
The thermal generation of mobile, positively charged species in the gate oxide of metal-oxide-semiconductor field effect transistors has been studied. Static hysteresis in the source-drain current versus gate voltage curves indicates the presence of ∼3.2x10[sup 12] cm[sup -2] mobile charges in devices annealed in D[sub 2] and H[sub 2] containing atmospheres at 700 °C for 30 min. Pulsed switched gate voltage experiments give clear evidence of a (mass)[sup 1/2] effect in the charge transport consistent with identification of the charges as deuterons and protons. © 2000 American Institute of Physics.


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