Deep-ultraviolet transparent conductive β-Ga[sub 2]O[sub 3] thin films

Orita, Masahiro; Ohta, Hiromichi; Hirano, Masahiro; Hosono, Hideo
December 2000
Applied Physics Letters;12/18/2000, Vol. 77 Issue 25
Academic Journal
Thin films of β-Ga[sub 2]O[sub 3] with an energy band gap of 4.9 eV were prepared on silica glass substrates by a pulsed-laser deposition method. N-type conductivity up to ∼1 S cm-1 was obtained by Sn-ion doping and deposition under low O[sub 2] partial pressure (∼10[sup -5] Pa) at substrate temperatures above 800 °C. The resulting internal transmittance at the wavelength (248 nm) of the KrF excimer laser exceeded 50% for the 100-nm-thick film, making this the most ultraviolet-transparent conductive oxide thin film to date and opening up prospects for applications such as ultraviolet transparent antistatic electric films in ultraviolet lithography. © 2000 American Institute of Physics.


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