Strong, easy-to-manufacture, transition edge x-ray sensor

Tanaka, Keiichi; Morooka, Toshimitsu; Chinone, Kazuo; Ukibe, Masahiro; Hirayama, Fuminori; Ohkubo, Masataka; Koyanagi, Masao
December 2000
Applied Physics Letters;12/18/2000, Vol. 77 Issue 25
Academic Journal
We developed a membrane structure with a silicon-on-insulator (SOI) wafer by using a micromachining technique to create a transition edge x-ray sensor. In this membrane structure, the part of the SOI layer between the silicon nitride (SiN[sub x]) film and the buried oxide layer was etched from the front side to form the SiN[sub x] membrane. Advantages of this membrane are that (a) it is stronger than conventional membranes and is therefore suitable for large format arrays, (b) the Si etching time is reduced from 12 h (for conventional etching) to 4 h, and (c) all the fabrication processes are done from the front of the wafer, thus simplifying the manufacturing process. © 2000 American Institute of Physics.


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