Field-induced dielectric properties of laser ablated antiferroelectric (Pb[sub 0.99]Nb[sub 0.02])(Zr[sub 0.57]Sn[sub 0.38]Ti[sub 0.05])[sub 0.98]O[sub 3] thin films

Bharadwaja, S. S. N.; Bharadwaja, S.S.N.; Krupanidhi, S. B.; Krupanidhi, S.B.
December 2000
Applied Physics Letters;12/18/2000, Vol. 77 Issue 25
Academic Journal
Niobium-modified lead zirconate stannate titanate antiferroelectric thin films with the chemical composition of (Pb[sub 0.99]Nb[sub 0.02])(Zr[sub 0.57]Sn[sub 0.38]Ti[sub 0.05])[sub 0.98]O[sub 3] were deposited by pulsed excimer laser ablation technique on Pt-coated Si substrates. Field-induced phase transition from antiferroelectric to ferroelectric properties was studied at different fields as a function of temperature. The field forced ferroelectric phase transition was elucidated by the presence of double-polarization hysteresis and double-butterfly characteristics from polarization versus applied electric field and capacitance and voltage measurements, respectively. The measured forward and reverse switching fields were 25 kV/cm and 77 kV/cm, respectively. The measured dielectric constant and dissipation factor were 540 and 0.001 at 100 kHz, respectively, at room temperature. © 2000 American Institute of Physics.


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