TITLE

Erratum: "Biexciton emission from high-quality ZnO films grown on epitaxial GaN by plasma-assisted molecular-beam epitaxy" [Appl. Phys. Lett. 77, 537 (2000)]

AUTHOR(S)
Ko, H. J.; Ko, H.J.; Chen, Y. F.; Chen, Y.F.; Yao, T.; Miyajima, H.; Yamamoto, A.; Goto, T.
PUB. DATE
December 2000
SOURCE
Applied Physics Letters;12/18/2000, Vol. 77 Issue 25
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Presents a correction to the article 'Biexciton emission from high-quality ZnO films grown on epitaxial GaN by plasma-assisted molecular-beam epitaxy,' published in the year 2000 issue of the 'Applied Physics Letters' journal.
ACCESSION #
4414205

 

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